IXFN20N120 IXYS, IXFN20N120 Datasheet
IXFN20N120
Manufacturer Part Number
IXFN20N120
Description
MOSFET N-CH 1200V 20A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFN20N120.pdf
(4 pages)
Specifications of IXFN20N120
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
7400pF @ 25V
Power - Max
780W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.75 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
780 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
0.75
Ciss, Typ, (pf)
7400
Qg, Typ, (nc)
160
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
780
Rthjc, Max, (ºc/w)
0.16
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN20N120
Manufacturer:
IR
Quantity:
292
Company:
Part Number:
IXFN20N120P
Manufacturer:
IR
Quantity:
1 000
Part Number:
IXFN20N120P
Quantity:
145
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
© 2003 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
D
ISOL
GH(th)
DSS
AS
DSS
DS(on)
d
T
T
T
T
T
Test Conditions
T
T
Continuous
Transient
I
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
T
S
ISOL
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
C
≤ 150°C, R
≤ I
= 25°C
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ 1 mA
DM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
TM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 1 mA
= 8 mA
G
, V
= 0.5 • I
= 2 Ω
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 MΩ
DD
T
T
(T
Advanced Technical Information
≤ V
J
J
rr
J
= 25°C
= 125°C
DSS
= 25°C, unless otherwise specified)
,
JM
1200
min.
IXFN 20N120
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
1200
1200
2500
3000
S
G
±30
±40
780
150
20
80
10
40
30
2
5
max.
±100
0.75
100
4.5
2
D
S
V/ns
mA
mJ
nA
µA
°C
°C
°C
V~
V~
Ω
V
V
W
V
V
A
A
A
V
V
g
J
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
E153432
DS(on)
DSS
DS (on)
HDMOS
G
= 1200 V
=
= 0.75 Ω Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
S
300 ns
TM
D
20 A
process
DS99116(11/03)
S
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IXFN20N120 Summary of contents
Page 1
... ± GSS DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved Advanced Technical Information IXFN 20N120 Maximum Ratings 1200 = 1 MΩ 1200 GS ±30 ± ≤ DSS 780 -55 ... +150 150 -55 ... +150 2500 3000 1 ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. , pulse test 15 ...
Page 3
... GS 2.4 2 20A D 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 5. Drain Current vs. Case Tem perature -50 - Degrees Centigrade C © 2003 IXYS All rights reserved 10V Value vs. D25 2.6 2.4 2 10A D 1.6 1.4 1.2 1 0.8 75 100 125 150 ...
Page 4
... Q - nanoCoulombs G 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 10000 1000 100 10 100 120 140 160 Fig. 11. Maxim um Transient Therm al Resistance ...