IXFN90N30 IXYS, IXFN90N30 Datasheet
IXFN90N30
Manufacturer Part Number
IXFN90N30
Description
MOSFET N-CH 300V 90A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFN90N30.pdf
(2 pages)
Specifications of IXFN90N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
33 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
10000pF @ 25V
Power - Max
560W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.033 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
90 A
Power Dissipation
560 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
90
Rds(on), Max, Tj=25°c, (?)
0.033
Ciss, Typ, (pf)
10000
Qg, Typ, (nc)
360
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary Data
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
DM
GSS
D25
AR
DSS
JM
GSM
AR
AS
J
stg
J
GH(th)
DSS
DGR
GS
D
ISOL
DSS
DS(on)
d
Test Conditions
V
V
V
V
V
V
Pulse test, t
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
S
ISOL
C
C
C
C
C
C
GS
DS
GS
DS
GS
GS
J
J
J
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
150 C, R
I
TM
1 mA
DM
GS
DSS
, di/dt 100 A/ s, V
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
= 0.5 • I
300 s, duty cycle d
G
= 2
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 M
DD
T
T
(T
J
J
rr
J
= 25 C
= 125 C
V
= 25 C, unless otherwise specified)
DSS
JM
,
2 %
min.
300
Characteristic Values
IXFN 90N30
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
300
300
360
560
150
20
30
90
90
64
30
3
5
max.
-
100
100
33 m
4
2
D
S
V/ns
mJ
mA
V~
V~
nA
V
V
W
A
C
C
C
C
V
V
V
V
A
A
A
g
J
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DSS
DS(on)
E153432
DS (on)
250 ns
HDMOS
G
= 300
= 90
= 33 m
D = Drain
TAB = Drain
S
TM
DS98540A(12/02)
D
process
V
A
S
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IXFN90N30 Summary of contents
Page 1
... GH(th GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle d © 2002 IXYS All rights reserved IXFN 90N30 Maximum Ratings 300 = 1 M 300 360 DSS 560 -55 ... +150 150 -55 ... +150 - 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values ...
Page 2
... Pulse test, t 300 s, duty cycle 50A, -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 40 70 10000 ...