IXFE23N100 IXYS, IXFE23N100 Datasheet
IXFE23N100
Manufacturer Part Number
IXFE23N100
Description
MOSFET N-CH 1000V 21A ISOPLUS227
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFE23N100.pdf
(2 pages)
Specifications of IXFE23N100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
7000pF @ 25V
Power - Max
500W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.43 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
21
Rds(on), Max, Tj=25°c, (?)
0.43
Ciss, Typ, (pf)
7000
Qg, Typ, (nc)
250
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
ISOPLUS227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFET
Single MOSFET Die
Preliminary data sheet
Symbol Test Conditions
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
V
V
I
I
R
© 2002 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
L
AR
J
stg
DSS
DGR
GS
GSM
AS
D
ISOL
DSS
GS(th)
DS(on)
d
J
= 25°C, unless otherwise specified)
T
T
T
T
Continuous
Transient
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
V
V
V
V
Note 2
S
ISOL
C
C
J
J
C
C
J
C
GS
DS
GS
DS
GS
GS
C
= 25°C
= 25°C;
= 25°C
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±20V, V
= V
= 0 V
= 10V, I
≤ 1 mA
Test Conditions
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
D
D
D
= 3mA
= 8mA
= I
GS
Note 1
TM
G
T
= 0V
= 2 Ω
t = 1 min
t = 1 s
GS
= 1MΩ
DD
≤ V
DSS
T
T
23N100
24N100
J
J
= 25°C
= 125°C
1000
Min.
3.0
24N100
23N100
24N100
23N100
Characteristic Values
IXFE 24N100 1000 V 22 A
IXFE 23N100 1000 V 21 A
Typ.
-55 ... +150
-55 ... +150
Maximum Ratings
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
1000
1000
2500
3000
150
500
±20
±30
300
Max.
22
21
96
92
24
60
19
±200 nA
0.43
0.39
3
100 µA
5
5.0
2 mA
V/ns
mJ
°C
°C
°C
°C
V~
V~
W
Ω
Ω
A
A
A
V
V
V
V
A
A
V
V
J
g
Features
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
•
ISOPLUS 227
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
t
Conforms to SOT-227B outline
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
rr
V
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low cost
Easy to mount
Space savings
High power density
≤ ≤ ≤ ≤ ≤ 250 ns
DSS
DS (on)
HDMOS
TM
I
G
(IXFE)
D25
D = Drain
TM
D
S
process
0.39 Ω Ω Ω Ω Ω
0.43 Ω Ω Ω Ω Ω
98896 (1/02)
R
DS(on)
S
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IXFE23N100 Summary of contents
Page 1
... GSS DSS DS DSS 10V DS(on Note 2 © 2002 IXYS All rights reserved IXFE 24N100 1000 IXFE 23N100 1000 Maximum Ratings 1000 1000 ±20 ±30 24N100 23N100 24N100 23N100 ≤ DSS 500 -55 ... +150 150 -55 ... +150 300 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. ...
Page 2
... Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 Test current: T 24N100 23N100 11 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values Min. Typ. Max 7000 750 260 35 ...