IXFN38N80Q2 IXYS, IXFN38N80Q2 Datasheet - Page 2

• Manufacturer Part Number: IXFN38N80Q2
• Description: MOSFET N-CH 800V 38A SOT-227
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN38N80Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 8340pF @ 25V
• Power - Max: 735W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.22 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 38 A
• Power Dissipation: 735 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 38
• Rds(on), Max, Tj=25°c, (?): 0.22
• Ciss, Typ, (pf): 9500
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 735
• Rthjc, Max, (ºc/w): 0.17
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS MOSFETs and IGBTs are covered by
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
one or moreof the following U.S. patents:
SM
RM
S
rr
d(on)
d(off)
f
r
SD
fs
RM
thJC
thCK
iss
oss
rss
g(on)
gs
gd
SOT-227B miniBLOC Outline
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
F
GS
Test Conditions
V
TO-264
= I
I
DS
F
= 0 V
S
= 25A, -di/dt = 100 A/µs, V
, V
= 10 V; I
V
V
R
V
GS
GS
GS
GS
G
= 1.0 Ω (External),
= 0 V,
= 0 V, V
= 10 V, V
= 10 V, V
D
= 0.5 • I
4,835,592
4,850,072
4,881,106
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
4,931,844
5,017,508
5,034,796
, pulse test
(T
(T
R
DSS
DSS
J
= 100 V
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
, I
, I
5,049,961
5,063,307
5,187,117
JM
D
D
= 0.5 • I
= 0.5 • I
min.
5,237,481
5,381,025
5,486,715
D25
D25
min.
Characteristic Values
25
Characteristic Values
8340
typ.
0.15
typ.
890
175
190
10
6,162,665
6,259,123 B1
6,306,728 B1
37
20
16
60
12
44
88
1
IXFK 38N80Q2
0.17
max.
max.
150
250
1.5
38
6,404,065 B1
6,534,343
6,583,505
K/W
K/W
µC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
S
TO-264 AA Outline
PLUS 247
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
25.91
19.81
20.32
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
20.80
15.75
19.81
TM
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
5.46 BSC
6,727,585
6,759,692
IXFN 38N80Q2
Millimeter
5.45 BSC
IXFX 38N80Q2
Outline
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
Min.
1.020
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.215 BSC
Min. Max.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Inches
.215 BSC
Inches
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190