IXFN150N15 IXYS, IXFN150N15 Datasheet
IXFN150N15
Manufacturer Part Number
IXFN150N15
Description
MOSFET N-CH 150V 150A SOT-227
Manufacturer
IXYS
Datasheet
1.IXFN150N15.pdf
(2 pages)
Specifications of IXFN150N15
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
150A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
9100pF @ 25V
Power - Max
600W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0125 Ohms
Forward Transconductance Gfs (max / Min)
75 s
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
150 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
150
Rds(on), Max, Tj=25°c, (?)
0.0125
Ciss, Typ, (pf)
9100
Qg, Typ, (nc)
360
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
595
Rthjc, Max, (ºc/w)
0.21
Package Style
SOT-227B
Lead Free Status / Rohs Status
Details
Other names
Q3181657
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN150N15
Manufacturer:
IXYS
Quantity:
200
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFET
Single MOSFET Die
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data sheet
Symbol Test Conditions
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
(T
V
V
I
I
R
D25
L(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSM
AR
AS
D
GS
ISOL
DSS
GS(th)
d
DS(on)
J
= 25°C, unless otherwise specified)
T
T
T
T
Continuous
Transient
Terminal (current limit)
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
V
V
V
V
Note 2
S
ISOL
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
T
= 25°C
= 25°C
= V
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= ±20V, V
= 0 V
C
= 10V, I
= V
£ 1 mA
Test Conditions
DM
= 25°C; Note 1
DSS
GS
, di/dt £ 100 A/ms, V
, I
D
D
D
= 3mA
= 8mA
TM
= 0.5 • I
GS
G
= 0V
= 2 W
t = 1 min
t = 1 s
D25
GS
= 1MW
DD
£ V
DSS
T
T
J
J
= 25°C
= 125°C
IXFN 150N15
Min.
150
2
Characteristic Values
Typ.
-55 ... +150
-55 ... +150
Maximum Ratings
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Max.
2500
3000
150
150
±20
±30
150
30
±100
150
100
600
150
600
300
60
12.5
100
3
5
2
4
V/ns
mJ
V~
V~
mW
°C
°C
°C
°C
mA
W
nA
mA
V
V
V
V
A
A
A
A
V
V
J
g
V
I
R
t
Features
·
·
·
·
·
·
·
·
Applications
·
·
·
·
·
·
·
Advantages
·
·
·
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D25
rr
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DSS
DS(on)
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
£ 250 ns
E153432
DS (on)
= 150
= 150
= 12.5 mW
HDMOS
G
S
D = Drain
TM
D
process
V
A
98653 (9/99)
S
1 - 2
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IXFN150N15 Summary of contents
Page 1
... V DSS DS DSS 10V 0.5 • I DS(on D25 Note 2 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFN 150N15 Maximum Ratings 150 150 ±20 ±30 150 100 600 150 £ DSS 600 -55 ... +150 150 -55 ...
Page 2
... D D25 190 0.21 0.05 Characteristic Values Min. Typ. Max. 150 600 1.5 250 = JM. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFN 150N10 miniBLOC, SOT-227 screws (4x) supplied ns Dim. Millimeter ns Min ...