IXFN32N100P IXYS, IXFN32N100P Datasheet
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IXFN32N100P
Specifications of IXFN32N100P
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IXFN32N100P Summary of contents
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... GS(th ± 30V GSS DSS DS DSS 10V 16A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFN32N100P Maximum Ratings 1000 = 1MΩ 1000 GS ± 30 ± 1.5 ≤ 150° 690 -55 ... +150 150 -55 ... +150 300 t = 1min 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...
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... DSS D 43 225 , I = 16A 85 DSS D 94 0.05 Characteristic Values Min. Typ. JM 2.2 15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN32N100P Max. SOT-227B Outline Ω 0.18 °C/W °C/W Max 128 A 1.5 V 300 ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...
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... Amperes D © 2008 IXYS CORPORATION, All rights reserved V = 15V GS 10V 15V GS 10V 16A Value 125º 25º IXFN32N100P Fig. 2. Extended Output Characteristics @ 25º 15V GS 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3.0 2 10V GS 2.6 2.4 2 32A 2.0 D 1.8 1.6 1.4 1 ...
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... V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 7.5 8.0 8.5 9.0 9 25ºC J 0.8 0.9 1.0 1.1 1.000 C iss 0.100 C oss 0.010 C rss 0.001 IXFN32N100P Fig. 8. Transconductance 40º 25ºC 125º Amperes D Fig. 10. Gate Charge 500V DS 14 ...