IXFE24N100 IXYS, IXFE24N100 Datasheet - Page 2

• Manufacturer Part Number: IXFE24N100
• Description: MOSFET N-CH 1000V 22A ISOPLUS227
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFE24N100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 390 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.39 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 22
• Rds(on), Max, Tj=25°c, (?): 0.39
• Ciss, Typ, (pf): 7000
• Qg, Typ, (nc): 250
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: SOT-227™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes: 1. Pulse width limited by T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
(T
Symbol
I
I
V
t
Q
I
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. I
V
V
24N100: I
23N100: I
T
V
Repetitive;
pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
F
DS
GS
Test current:
GS
= I
Test Conditions
Test Conditions
= 0 V, V
V
R
V
= 10 V; I
S
= 0
I
GS
GS
G
, V
F
= I
GS
= 10 V, V
= 1 Ω (External),
= 10 V, V
T
T
S
= 0 V,
, -di/dt = 100 A/µs, V
= 12 A
= 11.5 A
DS
D
= 25 V, f = 1 MHz
= I
T
DS
DS
, Note 2
= 0.5 • V
= 0.5 • V
JM.
JM
DSS
DSS
, I
, I
D
D
R
= I
= I
= 100 V
24N100
23N100
24N100
23N100
T
T
Min.
Min.
15
4,835,592
4,850,072
Characteristic Values
Characteristic Values
7000
Typ.
Typ.
0.07
1.0
750
260
250
135
22
35
35
75
21
55
8
4,881,106
4,931,844
0.25
Max.
250
Max.
1.5
24
23
96
92
5,017,508
5,034,796
K/W
K/W
µ C
n s
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
A
A
A
A
V
A
S
Please see IXFN24N100 data
sheet for characteristic curves.
5,049,961
5,063,307
ISOPLUS-227 B
5,187,117
5,237,481
IXFE 23N100
IXFE 24N100
5,486,715
5,381,025
6,306,728B1