IXFN70N60Q2 IXYS, IXFN70N60Q2 Datasheet
IXFN70N60Q2
Specifications of IXFN70N60Q2
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IXFN70N60Q2 Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS 0.5 • I DS(on Note 1 © 2003 IXYS All rights reserved IXFN 70N60Q2 g Maximum Ratings 600 = 1 MΩ 600 GS ±30 ±40 70 280 5.0 ≤ DSS 890 -55 ... +150 150 -55 ... +150 2500 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values (T = 25° ...
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... I = 0.5 • DSS D D25 120 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. JM 1.2 8 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXFN70N60Q2 miniBLOC, SOT-227 B Outline max screws (4x) supplied ns Dim. Millimeter ns Min. Max. A 31.50 31. 7.80 8.20 C 4.09 4.29 ...
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... Fig Normalized to I DS(on) Value vs 2 Amperes D © 2003 IXYS All rights reserved D25 D º º IXFN70N60Q2 Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I DS(on) Junction Temperature 2 2.5 2 70A 0.7 0.4 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case ...
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... IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 5 5.5 6 6.5 º 0 0 0.1 2 0.08 0.06 0.04 0. 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IXFN70N60Q2 Fig. 8. Transconductance 90 80 º - º º Amperes D Fig. 10. Gate Charge 1 0 ...