IXFN44N100P IXYS, IXFN44N100P Datasheet - Page 2

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IXFN44N100P

Manufacturer Part Number
IXFN44N100P
Description
MOSFET N-CH 1000V 37A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN44N100P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
37A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
305nC @ 10V
Input Capacitance (ciss) @ Vds
19000pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.22 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
37 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
37
Rds(on), Max, Tj=25°c, (?)
0.22
Ciss, Typ, (pf)
19000
Qg, Typ, (nc)
305
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
890
Rthjc, Max, (ºc/w)
0.14
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN44N100P
Manufacturer:
COSEL
Quantity:
1 000
Part Number:
IXFN44N100P
Quantity:
106
Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
Gi
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
I
V
Test Conditions
V
Gate input resistance
V
Resistive Switching Times
V
R
V
V
Repetitive, pulse width limited by T
I
F
F
R
DS
GS
GS
GS
GS
G
= 22A, -di/dt = 100A/μs
= I
= 100V
= 0V
= 20V, I
= 10V, V
= 1Ω (External)
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
DS
= 22A, Note 1
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 22A
= 22A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
20
Characteristic Values
Characteristic Values
1060
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
1.70
0.05
Typ.
305
104
125
2.5
17
19
41
60
68
90
54
35
0.14 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
176
1.5
300 ns
44
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN44N100P
7,005,734 B2
7,063,975 B2
7,157,338B2

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