IXFN27N80 IXYS, IXFN27N80 Datasheet - Page 4
![MOSFET N-CH 800V 27A SOT-227B](/photos/14/28/142807/to-227b_minibloc_sml.jpg)
IXFN27N80
Manufacturer Part Number
IXFN27N80
Description
MOSFET N-CH 800V 27A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK27N80.pdf
(4 pages)
Specifications of IXFN27N80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
400nC @ 10V
Input Capacitance (ciss) @ Vds
9740pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohms
Forward Transconductance Gfs (max / Min)
28 s
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
27 A
Power Dissipation
520 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
27
Rds(on), Max, Tj=25°c, (?)
0.32
Ciss, Typ, (pf)
8400
Qg, Typ, (nc)
350
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
520
Rthjc, Max, (ºc/w)
0.24
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1653251
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN27N80
Manufacturer:
IXYS
Quantity:
27
Company:
Part Number:
IXFN27N80
Manufacturer:
IXYS
Quantity:
200
Company:
Part Number:
IXFN27N80Q
Manufacturer:
IXYS
Quantity:
18 000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
0.001
100
0.01
80
60
40
20
0.1
12
10
0.0001
Figure 7. Gate Charge
0
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 10. Transient Thermal Resistance
8
6
4
2
0
1
0.2
0
D=0.02
D=0.5
D=0.2
D=0.1
D=0.05
D=0.01
0.4
Single pulse
V
Vds=300V
100
DS
I
I
I
I
D
D
G
G
=30A
=10mA
= 400V
= 27A
= 1mA
Gate Charge - nC
0.6
V
200
SD
T
J
- Volts
0.001
0.8
= 125
300
O
C
1.0
T
J
= 25
400
O
1.2
C
D = Duty Cycle
1.4
500
0.01
Pulse Width - Seconds
4,835,592
4,850,072
4,881,106
4,931,844
10000
1000
Figure 8. Capacitance Curves
100
0.1
0
5,017,508
5,034,796
IXFK 25N80
IXFN 25N80
5
10
5,049,961
5,063,307
Ciss
Coss
15
Crss
V
DS
1
- Volts
20
5,187,117
5,237,481
25
IXFK 27N80
IXFN 27N80
f = 1MHz
30
5,486,715
5,381,025
35
6,306,728B1
10
40