IXKN45N80C IXYS, IXKN45N80C Datasheet
IXKN45N80C
Manufacturer Part Number
IXKN45N80C
Description
MOSFET N-CH 800V 44A SOT-227B
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet
1.IXKN45N80C.pdf
(4 pages)
Specifications of IXKN45N80C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
74 mOhm @ 44A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
3.9V @ 4mA
Gate Charge (qg) @ Vgs
360nC @ 10V
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.074 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
44 A
Power Dissipation
380 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.074
Ciss, Typ, (pf)
9200
Qg, Typ, (nc)
360
Trr, Max, (ns)
800
Trr, Typ, (ns)
500
Pd, (w)
380
Rthjc, Max, (k/w)
0.33
Visol, Rms, (v)
2500
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXKN45N80C
Manufacturer:
TOSHIBA
Quantity:
14 300
CoolMOS
N-Channel Enhancement Mode
Low R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
MOSFET
Symbol
V
V
I
I
d
E
E
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
R
DSS
GSS
D25
D90
d(on)
r
d(off)
f
GS(th)
GS
V
DSS
AS
AR
DSon
thJC
g
gs
gd
/dt
DSon
, High V
Conditions
T
T
T
V
I
I
Conditions
V
V
V
V
V
V
I
D
D
D
VJ
C
C
GS
GS
DS
GS
GS
GS
DS
= 70 A; R
= 4 A; L = 80 mH; T
= 7 A; L = 3 mH; T
= 25°C
= 90°C
= 25°C
= V
= 0 V; I
= V
= ± 20 V; V
= 0 V; V
= 0 V; V
< V
DSS
DS
DSS
™ 1)
; I
; V
; I
DSS
D
G
F
D
= 4 mA
GS
DS
DS
= .2 Ω; T
= 7 A; | di
= I
DS
= 0 V; T
= 640 V; I
= 400 V
MOSFET
Power MOSFET
25
= 0 V
T
C
C
VJ
VJ
VJ
F
= 25°C
= 25°C
/dt | < 00 Aµs
D
= 25°C
= 25°C
= 25°C
= 70 A
(T
VJ
= 25°C, unless otherwise specified)
min.
2.
Characteristic Values
Maximum Ratings
typ.
200
360
84
63
48
25
5
75
0
G
S
max.
0.33
± 20
800
670
400
0.5
3.9
74
50
44
30
6
S
D
V/ns
K/W
mW
mJ
mJ
nC
nC
nC
µA
µA
nA
ns
ns
ns
ns
V
V
A
A
V
V
I
R
miniBLOC, SOT-227 B
E72873
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or Kelvin Source
Features
• miniBLOC package
• CoolMOS
• fast CoolMOS
• Enhanced total power density
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
D25
- Electrically isolated copper base
- Low coupling capacitance to the
- International standard package SOT-227
- Easy screw assembly
3
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
- low thermal resistance
3
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
- Low thermal resistance
DSS
DS(on) max
rd
rd
heatsink for reduced EMI
inductive switching (UIS)
due to reduced chip thickness
inductive switching (UIS)
due to reduced chip thickness
generation
generation
)
CoolMOS
Infineon Technologies AG.
™ )
IXKN 45N80C
power MOSFET
™ )
= 800 V
= 44 A
= 74 mΩ
™
power MOSFET
is a trademark of
G
D
S
20080526a
S
- 4
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IXKN45N80C Summary of contents
Page 1
... 400 .2 Ω d(off thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved G S Maximum Ratings ± 20 /dt | < 00 Aµ 25°C = 25°C Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. 63 2. = 25° 25° ...
Page 2
... ISOL ISOL M mounting torque d terminal connection torque Symbol Conditions R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. 60 0.9 .2 ...
Page 3
... SOT-227 B 400 300 200 100 120 T [°C] C Fig. Power dissipation IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 280 260 240 10 V 220 T = 25°C J 200 8 V 180 160 7 V 140 120 ...
Page 4
... T [°C] J Fig. 0 Avalanche energy IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 0 0.3 0.2 0 -60 - 100 T [°C] J Fig. 5 Drain-source on-state resistance ...