IXFN48N50U3 IXYS, IXFN48N50U3 Datasheet

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IXFN48N50U3

Manufacturer Part Number
IXFN48N50U3
Description
MOSFET N-CH 500V 48A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN48N50U3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
8400pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
48 A
Power Dissipation
520 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
500
Id25, Tc = 25°c, (a)
48
Id90, Tc = 90°c, (a)
36
Rds(on), Max, Tj = 25°c, (mohms)
100
Tf, Typ, (ns)
30
Tr, Typ, (ns)
60
Rthjc, Max, (ºc/w)
0.24
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN48N50U3
Quantity:
530
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Buck & Boost Configurations for
PFC & Motor Control Circuits
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
V
I
I
P
T
T
T
V
M
Weight
D25
DM
AR
FAVM
FRM
J
JM
stg
DSS
DGR
GS
GSM
AR
D
RRM
D
ISOL
d
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by max. T
T
Repetitive
I
T
T
T
tp <10 ms; pulse width limited by T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque (M4)
S
ISOL
J
J
C
C
C
J
C
C
C
£ I
= 25°C to 150°C
= 25°C to 150°C; R
£ 150°C, R
= 25°C
= 25°C,
= 25°C
= 25°C
= 70°C; rectangular, d = 0.5
= 25°C
£ 1 mA
DM
TM
, -di/dt £ 100 A/ms, V
G
= 2 W
t = 1 min
t = 1 s
GS
= 1 MW
IXFN44N50U2 IXFN44N50U3
IXFN48N50U2 IXFN48N50U3
DD
JM
£ V
DSS
J
44N50
48N50
44N50
48N50
,
2
-40 ... +150
-40 ... +150
Maximum Ratings
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
500
500
±20
±30
176
192
520
600
800
180
150
60
44
48
24
30
30
5
3
1
V/ns
mJ
V~
V~
°C
°C
°C
W
W
V
V
V
V
A
A
A
A
A
V
A
A
g
500 V
500 V
4
V
DSS
miniBLOC, SOT-227 B
Features
·
·
·
·
·
·
·
·
Applications
·
·
·
·
Advantages
·
·
·
topologies
International standard package
miniBLOC SOT-227B
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Low R
Rugged polysilicon gate cell structure
Low drain-to-case capacitance
(<60 pF)
- reduced RFI
Ultra-fast FRED diode with soft
reverse recovery
Switch reluctance motor controls
Popular Buck & Boost circuit
Power factor controls and buck
regulators
DC servo and robotic drives
DC choppers
Easy to mount with 2 screws
Space savings
Tightly coupled FRED
DS (on)
I
44 A
48 A
D (cont)
2
2
HDMOS
1
0.12 W 35 ns
0.10 W 35 ns
R
TM
3
DS(on)
process
3
96535B (7/00)
1
4
t
1 - 5
rr
4

Related parts for IXFN48N50U3

IXFN48N50U3 Summary of contents

Page 1

... Hz, RMS ISOL £ ISOL M Mounting torque d Terminal connection torque (M4) Weight IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFN44N50U2 IXFN44N50U3 IXFN48N50U2 IXFN48N50U3 2 Maximum Ratings 500 = 1 MW 500 GS ±20 ±30 44N50 44 48N50 48 44N50 ...

Page 2

... 25° 350 100° 0.05 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFN48N50U2 IXFN48N50U3 miniBLOC, SOT-227 B max ±200 nA mA 400 0.12 M4 screws (4x) supplied W 0.10 Dim. Millimeter Min. Max. ...

Page 3

... D Fig.5 Drain Current vs. Case Temperature 60 48N50 50 44N50 -50 - Degrees C C © 2000 IXYS All rights reserved 15V GS 75 100 125 150 IXFN44N50U2 IXFN48N50U2 IXFN44N50U3 IXFN48N50U3 Fig.2 Input Admittance 100 25° Volts GS Fig.4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 2.00 1. 24A D 1.50 1 ...

Page 4

... IXYS All rights reserved 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 T = 25°C J 1.00 1.25 1.50 0.01 Time - Seconds IXFN44N50U2 IXFN48N50U2 IXFN44N50U3 IXFN48N50U3 Fig.8 Capacitance Curves C iss MHz V = 25V DS C oss C rss Volts DS 0 ...

Page 5

... Fig. 17. Transient thermal impedance junction to case. © 2000 IXYS All rights reserved IXFN44N50U2 IXFN44N50U3 Fig. 12. Recovery charge versus -di /dt. F Fig. 15. Recovery time versus -di /dt. F IXFN48N50U2 IXFN48N50U3 Fig. 13. Peak reverse current vs. -di /dt. F Fig. 16. Peak forward voltage and forward recovery time vs. di /dt ...

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