IXFE48N50QD3 IXYS, IXFE48N50QD3 Datasheet - Page 2

• Manufacturer Part Number: IXFE48N50QD3
• Description: MOSFET N-CH 500V 41A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFE48N50QD3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 8000pF @ 25V
• Power - Max: 400W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 41 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Vdss, Max, (v): 500
• Id25, Tc = 25°c, (a): 41
• Id90, Tc = 90°c, (a): 31
• Rds(on), Max, Tj = 25°c, (mohms): 110
• Tf, Typ, (ns): 10
• Tr, Typ, (ns): 22
• Rthjc, Max, (ºc/w): 0.31
• Package Style: ISOPLUS227™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
I
I
R
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Ultra-fast Diode
Symbol
I
V
t
I
R
R
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
RM
GSS
DSS
d(on)
d(off)
f
R
r
rr
fs
DSS
GS(th)
DS(on)
thJC
thCK
F
thJC
thJK
iss
oss
g(on)
gd
rss
gs
2. IXFE44N50 I
T
T
I
Note1
I
I
IXFE48N50 I
F
I
F
J
J
= 60A, di/dt = -100 A/µs, V
= 1A, di/dt = -200 A/µs, V
= 25°C; V
= 150°C; V
= 60A, V
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %
Test Conditions
V
Test Conditions
V
GS
GS
GS
DS
DS
DS
GS
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
= 10 V, I
V
V
R
V
GS
GS
GS
G
GS
GS
T
T
DSS
R
= 0 V
R
= V
= 24A
= 1Ω (External)
= 0.8V
= 22A
, I
= 0 V, V
= 10 V, V
= 10 V, V
D
D
DC
RRM
D
D
= 1 mA
= 4 mA
, V
= I
= I
RRM
T
T
DS
DS
, pulse test
DS
DS
= 0
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
R
R
= 30 V, T
4,850,072
4,835,592
= 100 V, T
T
T
44N50Q
48N50Q
T
DSS
DSS
J
J
J
(T
(T
(T
= 150°C
= 25°C
= 125°C
, I
, I
4,931,844
4,881,106
J
J
J
J
D
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
= 25°C
D
= I
J
= I
= 100°C
T
T
5,034,796
5,017,508
min.
min.
min.
500
30
Characteristic Values
Characteristic Values
Characteristic Values
2
5,049,961
8000
5,063,307
0.05
0.07
typ.
typ.
typ.
930
220
190
35
IXFE44N50QD2
IXFE44N50QD3
36
33
22
75
10
40
86
0.31
max.
max.
max.
±100
0.12
0.11
2.05
100
200
5,237,481
5,187,117
2.5
1.4
8.3
0.7 K/W
50
4
2
K/W
K/W
K/W
nC
nC
nC
mA
pF
pF
pF
mA
µA
µA
ns
ns
ns
ns
nA
S
ns
Ω
Ω
V
V
V
V
A
5,381,025
5,486,715
Please note:
For characteristic curves please see
IXFK48N50Q
ISOPLUS-227 B
6,306,728B1
6,404,065B1
IXFE48N50QD2
IXFE48N50QD3
6,162,665
6,259,123B1 6,306,728B1 6,683,344
6,534,343
6,583,505