IXFN38N100P IXYS, IXFN38N100P Datasheet - Page 2

• Manufacturer Part Number: IXFN38N100P
• Description: MOSFET N-CH 1000V 38A SOT-227B
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFN38N100P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 24000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.21 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 38 A
• Power Dissipation: 1000 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 38
• Rds(on), Max, Tj=25°c, (?): 0.21
• Ciss, Typ, (pf): 24000
• Qg, Typ, (nc): 350
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1000
• Rthjc, Max, (ºc/w): 0.125
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
Gate Input Resistance
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 25A, -di/dt = 100A/μs
= I
= 1Ω (External)
= 100V
= 10V, V
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
DS
= 0.5 • I
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
18
Characteristic Values
Characteristic Values
1245
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
0.78
Typ.
0.05
350
150
150
2.5
17
29
24
80
40
74
71
55
0.125 °C/W
Max.
Max.
150
300
1.5
6,404,065 B1
6,534,343
6,583,505
38
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN38N100P
7,005,734 B2
7,063,975 B2
7,157,338B2