IXFN38N100P IXYS, IXFN38N100P Datasheet - Page 2
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IXFN38N100P
Manufacturer Part Number
IXFN38N100P
Description
MOSFET N-CH 1000V 38A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet
1.IXFN38N100P.pdf
(5 pages)
Specifications of IXFN38N100P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
350nC @ 10V
Input Capacitance (ciss) @ Vds
24000pF @ 25V
Power - Max
1000W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.21 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
38 A
Power Dissipation
1000 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
38
Rds(on), Max, Tj=25°c, (?)
0.21
Ciss, Typ, (pf)
24000
Qg, Typ, (nc)
350
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1000
Rthjc, Max, (ºc/w)
0.125
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN38N100P
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
IXFN38N100P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXFN38N100P
Quantity:
108
Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
Gate Input Resistance
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 25A, -di/dt = 100A/μs
= I
= 1Ω (External)
= 100V
= 10V, V
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
DS
= 0.5 • I
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
18
Characteristic Values
Characteristic Values
1245
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
0.78
Typ.
0.05
350
150
150
2.5
17
29
24
80
40
74
71
55
0.125 °C/W
Max.
Max.
150
300
1.5
6,404,065 B1
6,534,343
6,583,505
38
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN38N100P
7,005,734 B2
7,063,975 B2
7,157,338B2