IXFE180N20 IXYS, IXFE180N20 Datasheet
IXFE180N20
Manufacturer Part Number
IXFE180N20
Description
MOSFET N-CH 200V 158A ISOPLUS227
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFE180N20.pdf
(2 pages)
Specifications of IXFE180N20
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
158A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
14400pF @ 25V
Power - Max
500W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
158 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
158
Rds(on), Max, Tj=25°c, (?)
0.012
Ciss, Typ, (pf)
14400
Qg, Typ, (nc)
360
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
ISOPLUS227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary Data Sheet
© 2003 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
L(RMS)
DM
GSS
D25
AR
DSS
JM
GSM
AR
AS
J
stg
GH(th)
DSS
DGR
GS
D
ISOL
DSS
DS(on)
d
T
T
T
T
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
I
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Terminal current limit
S
ISOL
C
C
C
C
C
C
GS
DS
GS
DS
GS
J
J
J
GS
= 25°C
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
≤ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
DC
= 3 mA
= 8 mA
D
, V
G
= 0.5 • I
= 2 Ω
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 MΩ
DD
T
T
(T
J
J
≤ V
J
= 25°C
= 125°C
rr
= 25°C, unless otherwise specified)
DSS
JM
,
IXFE 180N20
min.
200
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
200
200
±20
±30
158
100
720
100
500
150
64
19
4
5
max.
±200
100
12 mΩ
4
2 mA
D
S
V/ns
mJ
V~
V~
nA
µA
°C
°C
°C
W
A
A
V
V
V
V
V
V
A
A
g
J
V
I
R
t
D25
rr
DS(on)
DSS
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
ISOPLUS 227
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Conforms to SOT-227B outline
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
UL 94 V-0, flammability classification
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
Encapsulating epoxy meets
DS (on)
= 200
= 158
= 12 mΩ Ω Ω Ω Ω
< 250
HDMOS
TM
G
(IXFE)
D = Drain
TM
D
S
ns
process
DS99040(04/03)
V
A
S
Related parts for IXFE180N20
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TRANS MOSFET N-CH 200V 158A 4ISOPLUS 227
Manufacturer:
IXYS Corporation
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXFE180N20 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXFE 180N20 Maximum Ratings 200 = 1 MΩ 200 GS ±20 ±30 158 100 720 JM 100 64 4 ≤ DSS 500 -55 ... +150 150 -55 ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ 50A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. ...