IXFE80N50 IXYS, IXFE80N50 Datasheet
IXFE80N50
Manufacturer Part Number
IXFE80N50
Description
MOSFET N-CH 500V 72A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFE80N50.pdf
(2 pages)
Specifications of IXFE80N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
72A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
9890pF @ 25V
Power - Max
580W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.055 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
72 A
Power Dissipation
580 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
72
Rds(on), Max, Tj=25°c, (?)
0.055
Ciss, Typ, (pf)
9890
Qg, Typ, (nc)
380
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
560
Rthjc, Max, (ºc/w)
0.22
Package Style
ISOPLUS227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
JM
GSM
AR
AS
J
stg
GS(th)
DSS
DGR
GS
D
ISOL
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
50/60 Hz, RMS
I
Mounting torque
Test Conditions
V
V
V
V
V
V
Note 2
Terminal connection torque
S
ISOL
C
C
C
C
C
C
J
J
J
GS
GS
DS
GS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C, Chip capability
= 25 C, Note 1
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
150 C, R
I
1 mA
TM
DM
GS
DSS
, di/dt
, I
D
D
DC
= 3 mA
D
= 8 mA
, V
G
= I
= 2
100 A/ s, V
DS
T
t = 1 min
t = 1 s
= 0
GS
= 1 M
T
T
DD
(T
J
J
J
= 25 C
= 125 C
rr
= 25 C, unless otherwise specified)
V
DSS
min.
500
2.5
Characteristic Values
IXFE 80N50
-40 ... +150
-40 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
500
500
320
580
150
20
30
72
80
64
19
6
5
max.
200
100
4.5
55
2
D
S
V/ns
m
mJ
mA
V~
V~
nA
W
V
V
A
A
C
C
C
A
V
V
V
V
A
g
J
Features
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
•
ISOPLUS 227
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Conforms to SOT-227B outline
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low cost
Easy to mount
Space savings
High power density
V
I
R
D25
DSS
DS(on)
DS (on)
HDMOS
TM
= 500
= 72
= 55 m
G
(IXFE)
D = Drain
TM
D
S
DS98898B(01/03)
process
V
A
S
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IXFE80N50 Summary of contents
Page 1
... GS(th GSS DSS DS DSS DS(on Note 2 © 2003 IXYS All rights reserved IXFE 80N50 Maximum Ratings 500 = 1 M 500 320 DSS 580 -40 ... +150 150 -40 ... +150 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 Characteristic Values ( unless otherwise specified) J min. typ. max. 500 2.5 ...
Page 2
... Notes: 1. Pulse width limited by T JM. 2. Pulse test, t 300 ms, duty cycle Test current IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max ...