IXFN30N120P IXYS, IXFN30N120P Datasheet - Page 4
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IXFN30N120P
Manufacturer Part Number
IXFN30N120P
Description
MOSFET N-CH 1200V 30A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet
1.IXFN30N120P.pdf
(4 pages)
Specifications of IXFN30N120P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
310nC @ 10V
Input Capacitance (ciss) @ Vds
19000pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.350
Ciss, Typ, (pf)
19000
Qg, Typ, (nc)
310
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
890
Rthjc, Max, (ºc/w)
0.140
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN30N120P
Manufacturer:
SIEMENS
Quantity:
1 000
Part Number:
IXFN30N120P
Quantity:
147
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0
100
5
0
10
4.5
0.3
0
0.4
f = 1 MHz
5
5
Fig. 9. Forward Voltage Drop of
0.5
Fig. 7. Input Admittance
10
5.5
0.6
Fig. 11. Capacitance
C rss
Intrinsic Diode
T
0.7
V
V
15
J
V
SD
GS
= 125ºC
DS
6
T
C oss
- Volts
- Volts
J
- Volts
0.8
= 125ºC
20
- 40ºC
C iss
25ºC
6.5
0.9
25
1
T
7
J
30
= 25ºC
1.1
7.5
35
1.2
1.3
40
8
1.000
0.100
0.010
0.001
35
30
25
20
15
10
16
14
12
10
5
0
0.0001
8
6
4
2
0
0
0
2
V
I
I
D
G
DS
50
= 15A
= 10mA
Fig. 12. Maximum Transient Thermal
4
= 600V
0.001
6
100
Fig. 8. Transconductance
8
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
150
10
G
I
- NanoCoulombs
D
0.01
12
Impedance
- Amperes
200
14
16
250
IXFN30N120P
0.1
18
IXYS REF: F_30N120P(97) 4-01-08-C
300
T
20
J
= - 40ºC
22
350
24
1
25ºC
26
125ºC
400
28
450
10
30