VMK165-007T IXYS, VMK165-007T Datasheet
VMK165-007T
Manufacturer Part Number
VMK165-007T
Description
MOSFET MOD DUAL COMMON TO-240AA
Manufacturer
IXYS
Datasheet
1.VMK165-007T.pdf
(2 pages)
Specifications of VMK165-007T
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 82.5A, 10V
Drain To Source Voltage (vdss)
70V
Current - Continuous Drain (id) @ 25° C
165A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
480nC @ 10V
Input Capacitance (ciss) @ Vds
8.8nF @ 25V
Power - Max
390W
Mounting Type
Chassis Mount
Package / Case
TO-240AA
Configuration
Dual Common Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
70 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
165 A
Power Dissipation
390 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Screw
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
70
Id25, Tc = 25°c, (a)
165
Id80, Tc = 80°c, (a)
-
Id90, Tc = 90°c, (a)
-
Rds(on), Max, Tj = 25°c, (mohms)
7
Tf, Typ, (ns)
110
Tr, Typ, (ns)
280
Rthjc, Max, (ºc/w)
0.32
Package Style
TO-240 AA (+ Kelvin contact)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VMK165-007T
Manufacturer:
IXYS
Quantity:
86
Company:
Part Number:
VMK165-007T
Manufacturer:
TOSHIBA
Quantity:
560
Dual Power
MOSFET Module
Common-Source connected
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
Data per MOSFET unless otherwise stated.
© 2000 IXYS All rights reserved
D25
D
DM
GSS
DSS
J
JM
stg
DGR
tot
ISOL
GS(th)
DSS
GS
GSM
DSS
DS(on)
d
Conditions
T
T
Continuous
Transient
T
T
T
T
50/60 Hz
I
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
Typical including screws
Conditions
V
V
V
V
V
V
Pulse test, t £ 300 µs, duty cycle d £ 2 %
ISOL
J
J
C
C
C
C
GS
DS
GS
DS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 100°C
= 25°C, t
= 25°C, T
£ 1 mA
= 0 V, I
= V
= ±20 V DC, V
= V
= 0.8 • V
= 10 V, I
GS
DSS
, I
,
D
D
D
DSS
= 1 mA
= 8 mA
p
J
= 0.5 • I
= 10 µs, pulse width limited by T
, V
= 150°C
V
DS
GS
GS
= 0
= 0 V, T
= 0 V, T
D25
GS
t = 1 s
t = 1 min
= 6.8 kW
Advanced Technical Information
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
4
5
VMK 165-007T
min.
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
Characteristic Values
70
-40 ... +150
-40 ... +125
2
JM
Maximum Ratings
1
typ.
2
3000
3600
±20
±30
165
104
660
390
150
6
70
70
90
3
max.
500 nA
200 µA
4
1 mA
7 mW
6
V~
V~
°C
°C
°C
7
W
V
V
V
V
A
A
A
V
V
g
V
I
R
TO-240 AA
1, 3 = Drain,
5, 6 = Gate,
Features
•
•
•
•
•
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
•
D25
Two MOSFET with common source
International standard package
JEDEC TO-240 AA
Direct copper bonded Al
base plate
Isolation voltage 3000 V~
Low R
Low package inductance for high
speed switching
Kelvin source contact
Keyed twin plugs
Push-pull inverters
Switched-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
AC static switches
Easy to mount with two screws
Space and weight savings
High power density
Low losses
DSS
DS(on)
E 72873
DS(on)
= 70 V
= 165 A
= 7 mW
HDMOS
1
2 = Common Source
4, 7 = Kelvin Source
2
TM
process
3
2
O
3
6
ceramic
7
4
5
1 - 2
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VMK165-007T Summary of contents
Page 1
... DSS DS DSS 0.8 • DSS 0.5 • I DS(on Pulse test, t £ 300 µs, duty cycle d £ Data per MOSFET unless otherwise stated. © 2000 IXYS All rights reserved Advanced Technical Information VMK 165-007T Maximum Ratings ±20 ±30 165 104 660 JM 390 -40 ...
Page 2
... Repetitive; pulse width limited Pulse test, t £ 300 µs, duty cycle d £ -di/dt = 200 A/µ © 2000 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. pulsed 60 80 D25 8.8 4.0 2.4 120 , I = 0.5 • I 280 DSS D D25 390 ...