IXFN44N50U2 IXYS, IXFN44N50U2 Datasheet - Page 3

• Manufacturer Part Number: IXFN44N50U2
• Description: MOSFET N-CH 500V 44A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN44N50U2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 8400pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 500
• Id25, Tc = 25°c, (a): 44
• Id90, Tc = 90°c, (a): 33
• Rds(on), Max, Tj = 25°c, (mohms): 120
• Tf, Typ, (ns): 30
• Tr, Typ, (ns): 60
• Rthjc, Max, (ºc/w): 0.24
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
-50
0
0
Fig.1 Output Characteristics
Fig.3 R
Fig.5 Drain Current vs.
T
T
J
10 20 30 40 50 60 70 80 90 100
J
-25
= 25°C
= 25°C
48N50
5
44N50
Case Temperature
DS(on)
0
10
V
T
25
GS
vs. Drain Current
I
C
D
V
- Degrees C
15
= 10V
- Amperes
DS
V
50
- Volts
GS
= 10V
20
75
V
GS
7V
= 15V
25
100 125 150
6V
30
5V
35
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
IXFN44N50U2
IXFN44N50U3
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
90
80
70
60
50
40
30
20
10
0
-50
-50
Fig.2 Input Admittance
Fig.4 Temperature Dependence
Fig.6 Temperature Dependence of
0
1
-25
-25
V
of Drain to Source Resistance
Breakdown and Threshold Voltage
GS(th)
2
0
0
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
GS
50
50
- Volts
5
I
IXFN48N50U2
IXFN48N50U3
D
= 24A
6
75
75
T
J
= 25°C
7
100 125 150
100 125 150
BV
8
DSS
9
10
3 - 5