IXFN20N120P IXYS, IXFN20N120P Datasheet

IXFN20N120P

Manufacturer Part Number

IXFN20N120P

Description

MOSFET N-CH 1200V 20A SOT-227B

Manufacturer

IXYS

Series

Polar™r

Datasheet

1.IXFN20N120P.pdf (4 pages)

Specifications of IXFN20N120P

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

570 mOhm @ 10A, 10V

Drain To Source Voltage (vdss)

1200V (1.2kV)

Current - Continuous Drain (id) @ 25° C

20A

Vgs(th) (max) @ Id

6.5V @ 1mA

Gate Charge (qg) @ Vgs

193nC @ 10V

Input Capacitance (ciss) @ Vds

11100pF @ 25V

Power - Max

595W

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Configuration

Single Dual Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.57 Ohms

Drain-source Breakdown Voltage

1200 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

20 A

Power Dissipation

595 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

1200

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.57

Ciss, Typ, (pf)

11100

Qg, Typ, (nc)

193

Trr, Typ, (ns)

Trr, Max, (ns)

300

Pd, (w)

595

Rthjc, Max, (ºc/w)

0.210

Package Style

SOT-227B

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXFN20N120P

Manufacturer:

Quantity:

1 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

IXFN20N120P

Quantity:

145

Current page: 1 of 4
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Polar

HiPerFET

Symbol

dV/dt

Weight

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

D25

GSS

DSS

stg

DSS

DGR

GSS

GSM

ISOL

GS(th)

DS(on)

DSS

= 25°C, unless otherwise specified)

Power MOSFET

Test Conditions

Continuous

Transient

1.6mm (0.062 in.) from case for 10s

50/60 Hz, RMS

Mounting torque

Terminal connection torque

Test Conditions

ISOL

= 25°C to 150°C

= 25°C to 150°C, R

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤ I

= 25°C

≤ 1mA

= 0V, I

= V

= ± 30V, V

= V

= 0V

= 10V, I

, V

DSS

, I

= 1mA

= 10A, Note 1

≤ V

DSS

= 0V

, T

≤ 150°C

= 1MΩ

= 125°C

t = 1s

t = 1min

IXFN20N120P

1200

-55 ... +150

Min.

3.5

Characteristic Values

Maximum Ratings

1.3/11.5

1.5/13

1200

2500

3000

± 30

± 40

595

150

300

Typ.

± 200

Max.

570 mΩ

Nm/lb.in.

6.5

5 mA

V/ns

μA

°C

miniBLOC, SOT-227 B (IXFN)

G = Gate

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

Features

•

Advantages

•

Applications:

D25

International standard package

Encapsulating epoxy meets

UL 94 V-0, flammability classification

miniBLOC with Aluminium nitride

isolation

Fast recovery diode

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

High Voltage Switched-mode and

High Voltage Pulse Power Applications

High Voltage Discharge circuits in

Lasers Pulsers, Spark Igniters, RF

High Voltage DC-DC converters

High Voltage DC-AC inverters

resonant-mode power supplies

Generators

Easy to mount

Space savings

High power density

DS(on)

DSS

E153432

= 1200V

= 20A

≤ ≤ ≤ ≤ ≤ 570mΩ Ω Ω Ω Ω

≤ ≤ ≤ ≤ ≤ 300ns

D = Drain

DS99889A (04/08)

Related parts for IXFN20N120P

IXFN20N120P Summary of contents

Page 1

... GS(th ± 30V GSS DSS DS DSS 10V 10A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFN20N120P Maximum Ratings 1200 = 1MΩ 1200 GS ± 30 ± ≤ 150° 595 -55 ... +150 150 -55 ... +150 300 t = 1min 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... DSS 193 , I = 10A 74 DSS D 85 0.05 Characteristic Values Min. Typ. JM 0.84 9 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN20N120P Max. SOT-227B Outline Ω 0.21 °C/W °C/W Max 1.5 V 300 ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 ...

Page 3

... I - Amperes D © 2008 IXYS CORPORATION, All rights reserved V = 10V 10V 10A Value 125º 25º IXFN20N120P Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2 10V 2.4 GS 2.2 2 20A D 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 ...

Page 4

... T = 25º 0.9 1.0 1.1 1.2 1.3 1.000 C iss 0.100 C oss 0.010 C rss 0.001 0.00001 IXFN20N120P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 600V 10A 10mA 120 160 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds ...

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