VMO580-02F IXYS, VMO580-02F Datasheet
VMO580-02F
Manufacturer Part Number
VMO580-02F
Description
MOSFET N-CH 200V 580A MODULE
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.VMO580-02F.pdf
(2 pages)
Specifications of VMO580-02F
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.8 mOhm @ 430A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
580A
Vgs(th) (max) @ Id
4V @ 50mA
Gate Charge (qg) @ Vgs
2750nC @ 10V
Mounting Type
Chassis Mount
Package / Case
Y3-Li
Vdss, Max, (v)
200
Id25, Tc = 25°c, (a)
580
Id80, Tc = 80°c, (a)
430
Rds(on), Max, Tj = 25°c, (mohms)
3.80
Tf, Typ, (ns)
350
Tr, Typ, (ns)
500
Rthjc, Max, (k/w)
0.050
Package Style
Y3-Li (w/o terminal 1, low inductance)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Other names
Q1221985A
HipPerFET
Preliminary Data
Symbol
V
V
I
I
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
V
t
R
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
N-Channel Enhancement Mode
MOSFET
D25
D80
F25
F80
DSS
GSS
d(on)
r
d(off)
f
rr
DSS
GS
GSth
F
DSon
thJC
thJS
g
gs
gd
Conditions
T
T
T
(diode) T
(diode) T
Conditions
V
V
V
V
(diode) I
(diode) I
with heat transfer paste
VJ
C
C
GS
DS
DS
GS
= 25°C
= 80°C
= 25°C to 150°C
V
V
I
= 10 V; I
= 20 V; I
= 0.8 • V
= ±20 V; V
D
GS
GS
= I
= 10 V; V
= 10 V; V
F
F
D80
TM
C
C
= 300 A; V
= 300 A; -di/dt = 500 A/µs; V
= 25°C
= 80°C
; R
D
D
DSS
Module
= 50 mA
= I
G
DS
; V
= 1
D80
DS
DS
= 0 V
GS
= 0.5 • V
= 0.5 • V
GS
= 0 V; T
= 0 V
T
DSS
DSS
VJ
VJ
(T
; I
;
= 25°C
= 125°C
VJ
D
= I
= 25 C, unless otherwise specified)
D80
DS
= ½ V
min.
VMO 580-02F
DSS
Characteristic Values
2
Maximum Ratings
2750
1350
0.07
500
210
500
900
350
300
typ.
3.2
0.9
3
200
±20
580
430
580
430
KS
G
max.
0.05 K/W
3.8 m
2.6 mA
1.1
4
1
K/W
mA
D
S
nC
nC
nC
µA
ns
ns
ns
ns
ns
V
V
A
A
A
A
V
V
V
I
R
Features
• HiPerFET
• package
Applications
• converters with high power density for
D25
- low R
- dv/dt ruggedness
- fast intrinsic reverse diode
- low inductive current path
- screw connection to high current
- use of non interchangeable
- Kelvin source terminals for easy drive
- isolated ceramic base plate
- main and auxiliary AC drives of
- DC drives
- power supplies
DSS
DS(on)
main terminals
connectors for auxiliary terminals
possible
electric vehicles
D
DSon
= 200 V
= 580 A
= 3.8 m
TM
S
technology
G
KS
1 - 2
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VMO580-02F Summary of contents
Page 1
... (diode 300 A; -di/dt = 500 A/µ thJC R with heat transfer paste thJS IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved VMO 580-02F G KS Maximum Ratings 200 ±20 580 430 580 430 Characteristic Values (T ...
Page 2
... Conditions stg mA; 50/60 Hz ISOL ISOL M Mounting torque (M6) d Terminal connection torque (M6) Symbol Conditions Weight Dimensions 0.0394") © 2000 IXYS All rights reserved Maximum Ratings -40...+150 C -40...+125 C 3600 V~ 2.25 - 2.75 Nm 4.5 - 5.5 Nm Characteristic Values min. typ. max. 250 g Optional accessories for modules ...