VMM90-09F IXYS, VMM90-09F Datasheet - Page 4

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VMM90-09F

Manufacturer Part Number
VMM90-09F
Description
MOSFET MOD PHASE LEG 900V Y3-LI
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of VMM90-09F

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
76 mOhm @ 65A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
85A
Vgs(th) (max) @ Id
5V @ 30mA
Gate Charge (qg) @ Vgs
960nC @ 10V
Mounting Type
Chassis Mount
Package / Case
Y3-Li
Vdss, Max, (v)
900
Id25, Tc = 25°c, (a)
85
Rds(on), Max, Tj = 25°c, (ohms)
76
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
960
Tf, Typ, (ns)
140
Tr, Typ, (ns)
180
Pd, (w)
-
Rthjc, Max, (c/w)
0.08
Package Style
Y3-Li (low inductance)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VMM90-09F
Manufacturer:
IXYS
Quantity:
120
Part Number:
VMM90-09F
Manufacturer:
LS
Quantity:
5 600
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
thJC
V
0.100
0.010
0.001
I
GS
D
K/W
200
160
120
A
16
12
80
40
V
0.001
8
4
0
0
0.0
Fig. 7 Typical turn-on gate charge characteristics
Fig. 9 Typical forward characteristics of diode
Fig. 11
0
V
I
I
200
D
G
DS
0.2
= 45 A
= 40 mA
Transient thermal resistance
= 500 V
400
0.4
0.01
T
J
600
= 125°C
0.6
800
V
SD
Q
0.8
g
1000 1200
T
J
= 25°C
0.1
1.0
nC
V
t
1
C
s
100000
I
10000
D
pF
1000
100
100
A
80
60
40
20
0
10
0
Fig. 8 Typical capacitances
0
Fig. 10
20
5
Continuous drain current
10
40
15
60
f = 1MHz
20
80
VMM 90-09F
V
DS
100 120 140
25
T
C
30
35
C
C
C
iss
oss
rss
4 - 4
V
°C

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