IRAM336-025SB3 International Rectifier, IRAM336-025SB3 Datasheet - Page 12

• Manufacturer Part Number: IRAM336-025SB3
• Description: IC HYBRID MULTI-CHIP 500V 2A
• Manufacturer: International Rectifier
• Type: FETr

Specifications of IRAM336-025SB3

• Configuration: 3 Phase
• Current: 2A
• Voltage: 500V
• Package / Case: 19-SIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Isolation: -

IRAM336-025SB
12
Figure 10. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V
160
150
140
130
120
110
100
90
80
70
Figure 9. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
150
125
100
75
50
25
70
0
0
T
C
75
Sinusoidal Modulation, V
is limited to 100ºC
T
J avg
0.2
Internal Therm istor Tem perature Equivalent Read Out - °C
= 1.181 x T
80
+
=360V, T
0.4
85
F
F
F
T herm
PWM
PWM
PWM
Output Phase Current - A
+ 9.728
= 12kHz
= 16kHz
= 20kHz
J
=150°C, F
0.6
90
+
=360V, T
95
PWM
0.8
J
=150°C, MI=0.8, PF=0.6
=20KHz, F
100
1
RMS
MOD
105
=50Hz, MI=0.8, PF=0.6
1.2
110
1.4
115
118.8
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120
1.6