FSBS3CH60 Fairchild Semiconductor, FSBS3CH60 Datasheet - Page 6

• Manufacturer Part Number: FSBS3CH60
• Description: SMART POWER MODULE 3A SPM27-BA
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSBS3CH60

• Configuration: 3 Phase
• Current: 3A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27BA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FSBS3CH60_NL; FSBS3CH60_NL

FSBS3CH60 Rev. C
Electrical Characteristics
Inverter Part
Note:
3. t
HS
LS
For the detailed information, please see Figure 4.
ON
Symbol
and t
V
CE(SAT)
V
OFF
t
t
F
t
t
C(OFF)
C(OFF)
C(ON)
C(ON)
t
t
I
t
t
OFF
OFF
CES
ON
ON
t
t
include the propagation delay time of the internal drive IC. t
rr
rr
Collector-Emitter
Saturation Voltage
FWD Forward Voltage
Switching Times
Collector-Emitter
Leakage Current
V
IN(ON)
Parameter
V
IN
t
ON
V
10% I
(a) turn-on
CE
t
100% I
rr
C
(T
90% I
Figure 4. Switching Time Definition
J
t
C
C(ON)
= 25°C, Unless Otherwise Specified)
100% I
C
10% V
V
V
V
V
I
V
(Note 3)
V
I
V
(Note 3)
V
C
C
CC
IN
IN
PN
IN
PN
IN
CE
= 3A
= 3A
C
= 5V
= 0V
= 0V ↔ 5V, Inductive Load
= 0V ↔ 5V, Inductive Load
= V
= 300V, V
= 300V, V
= V
CE
I
C
C(ON)
BS
CES
= 15V
and t
CC
CC
Conditions
C(OFF)
6
= V
= V
BS
BS
are the switching time of IGBT itself under the given gate driving condition internally.
V
I
I
= 15V
= 15V
C
C
IN(OFF)
=3A, T
=3 A, T
V
t
IN
OFF
J
J
= 25°C
= 25°C
I
10% V
(b) turn-off
C
CE
Min.
t
C(OFF)
-
-
-
-
-
-
-
-
-
-
-
-
-
10% I
V
Typ.
0.39
0.19
0.56
0.19
0.10
0.57
0.24
0.62
0.20
0.10
CE
C
-
-
-
Max.
250
2.3
2.1
-
-
-
-
-
-
-
-
-
-
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Units
µA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
V
V