VSKH250-16D25 Vishay, VSKH250-16D25 Datasheet - Page 7
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VSKH250-16D25
Manufacturer Part Number
VSKH250-16D25
Description
SCR 1600-2500V 250A MAGN-A-PAK
Manufacturer
Vishay
Datasheet
1.VSKH170-04.pdf
(11 pages)
Specifications of VSKH250-16D25
Structure
Series Connection - SCR/Diode
Number Of Scrs, Diodes
1 SCR, 1 Diode
Voltage - Off State
1600V
Current - Gate Trigger (igt) (max)
200mA
Current - On State (it (av)) (max)
250A
Current - On State (it (rms)) (max)
555A
Current - Non Rep. Surge 50, 60hz (itsm)
8500A, 8900A
Current - Hold (ih) (max)
500mA
Mounting Type
Chassis Mount
Package / Case
3-MAGN-A-PAK™
Mounting Style
Screw
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRKH250-16D25
IRKH250-16D25
IRKH250-16D25
IRKH250-16D25
IRKH250-16D25
Document Number: 94417
Revision: 02-Jul-10
Fig. 14 - Maximum Non-Repetitive Surge Current
7500
7000
6500
6000
5500
5000
4500
4000
3500
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1
VSK.250.. Series
Per Junction
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
1400
1200
1000
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
700
600
500
400
300
200
100
800
600
400
200
(MAGN-A-PAK Power Modules), 170 A/250 A
For technical questions within your region, please contact one of the following:
0
0
10
0
0
Conduction angle
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 130°C
100
Total RMS Output Current (A)
100
Total Output Current (A)
J
200
SCR/SCR and SCR/Diode
(Rect)
200
(Sine)
Fig. 16 - On-State Power Loss Characteristics
Fig. 17 - On-State Power Loss Characteristics
180°
180°
300
100
Single Phase Bridge
180°
120°
2 x VSK.250.. Series
90°
60°
30°
Connected
300
VSK.250.. Series
T
Per Module
J
T
400
= 130°C
J
= 130°C
400
500
600
500
0
Maximum Allowable Ambient Temperature (°C)
0
Maximum Allowable Ambient Temperature (°C)
VSK.170PbF, VSK.250PbF Series
20
20
40
40
Fig. 15 - Maximum Non-Repetitive Surge Current
DiodesEurope@vishay.com
9000
8000
7000
6000
5000
4000
3000
60
60
0.01
VSK.250.. Series
Per Junction
Maximum Non Repetitive Surge Curren t
80
80
Of Conduction May Not Be Maintained .
Versus Pulse Train Duration. Control
Pulse Train Duration (s)
100
Vishay Semiconductors
100
120
No Voltage Reapplied
Rated V
120
0.1
Initial T
RRM
Reapplied
J
= 130°C
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