VSKL250-16D25 Vishay, VSKL250-16D25 Datasheet - Page 3

• Manufacturer Part Number: VSKL250-16D25
• Description: SCR 1600-2500V 250A MAGN-A-PAK
• Manufacturer: Vishay

Specifications of VSKL250-16D25

• Structure: Series Connection - SCR/Diode
• Number Of Scrs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1600V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 250A
• Current - On State (it (rms)) (max): 555A
• Current - Non Rep. Surge 50, 60hz (itsm): 8500A, 8900A
• Current - Hold (ih) (max): 500mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKL250-16D25; IRKL250-16D25; IRKL250-16D25

Document Number: 94417
Revision: 02-Jul-10
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of off-state voltage
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger
Maximum gate current that willnot trigger
Maximum rate of rise of turned-on current
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
[e-mail], [e-mail],
MAP to heatsink
(MAGN-A-PAK Power Modules), 170 A/250 A
For technical questions within your region, please contact one of the following:
busbar to MAP
SYMBOL
SYMBOL
SCR/SCR and SCR/Diode
dV/dt
I
I
V
RRM,
DRM
t
t
t
INS
d
q
r
SYMBOL
SYMBOL
T
P
R
+ I
R
- V
J
dI/dt
P
V
V
I
, T
G(AV)
I
thJC
thCS
GT
GD
GM
GD
GT
GM
GT
Stg
T
V
I
V
T
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
T
TM
J
J
J
d
R
= 25 °C, gate current = 1 A dI
= T
= T
= 0.67 % V
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100 
= 300 A; dI/dt = 15 A/μs; T
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the
spread of the compound.
J
J
t
f = 50 Hz, T
t
t
T
T
T
T
T
T
T
T
T
rated V
p
p
p
maximum
J
J
J
J
J
J
J
J
J
maximum, exponential to 67 % rated V
 5 ms, T
 5 ms, T
 5 ms, T
= - 40 °C
= 25 °C
= T
= - 40 °C
= 25 °C
= T
= T
= T
= T
J
J
J
J
J
DRM
maximum, rated V
maximum, rated V
maximum, I
maximum
maximum
DRM
TEST CONDITIONS
TEST CONDITIONS
VSK.170PbF, VSK.250PbF Series
TEST CONDITIONS
TEST CONDITIONS
J
J
J
J
applied
= T
= T
= T
= T
J
J
J
J
maximum
maximum
maximum
maximum
TM
Anode supply = 12 V,
resistive load; Ra = 1 
Anode supply = 12 V,
resistive load; Ra = 1 
= 400 A,
[e-mail]
J
= T
DRM
DRM
g
/dt = 1 A/μs
J
maximum;
applied
applied
Vishay Semiconductors
DRM
VSK.170
VSK.170
0.17
0.02
VSK.170
VSK.170
- 40 to 130
50
4 to 6
50 to 150
10.0
0.25
10.0
17.8
350
200
100
500
500
4.0
3.0
2.0
2.0
3.0
5.0
MAGN-A-PAK
3000
1000
1.0
2.0
VSK.250
VSK.250
0.125
0.02
VSK.250
VSK.250
www.vishay.com
60
UNITS
UNITS
UNITS
UNITS
A/μs
K/W
Nm
mA
mA
oz.
°C
V/μs
W
mA
A
V
V
g
μs
V
3