VSKT430-18 Vishay, VSKT430-18 Datasheet - Page 2

• Manufacturer Part Number: VSKT430-18
• Description: SCR DBL 2SCR 1800V 430A MAGNAPAK
• Manufacturer: Vishay

Specifications of VSKT430-18

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1800V
• Current - On State (it (av)) (max): 430A
• Current - On State (it (rms)) (max): 675A
• Current - Non Rep. Surge 50, 60hz (itsm): 15700A, 16400A
• Current - Hold (ih) (max): 500mA
• Mounting Type: Chassis Mount
• Package / Case: SUPER MAGN-A-PAK
• Rated Repetitive Off-state Voltage Vdrm: 1800 V
• Off-state Leakage Current @ Vdrm Idrm: 100 mA
• Holding Current (ih Max): 500 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 16400 A
• Repetitive Peak Forward Blocking Voltage: 1800 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Gate Trigger (igt) (max): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: *IRKT430-18; IRKT430-18; IRKT430-18

IRK.430.. Series
Bulletin I27400 rev. A 09/97
2
On-state Conduction
Switching
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
I
I
I
I
I
I
V
V
r
r
V
V
I
I
di/dt
t
t
T(AV)
F(AV)
T(RMS)
TSM
FSM
2
2
H
L
d
Type number
IRK.430..
t1
t2
q
t
FM
T(TO)1
T(TO)2
TM
t
Parameter
Parameter
Maximum average on-state current
@ Case temperature
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state or forward
voltage drop
Maximum holding current
Typical latching current
Maximum rate of rise of turned-on
current
Typical delay time
Typical turn-off time
2
2
t for fusing
Voltage
t for fusing
Code
16
20
18
V
RRM
/V
peak reverse voltage
DRM
, maximum repetitive
1600
1800
2000
V
IRK.430..
IRK.430..
12320
1232
1125
1000
1000
15.7
16.4
13.2
13.8
0.96
1.06
0.51
0.45
1.65
430
675
871
795
500
200
2.0
82
KA
Units Conditions
Units Conditions
KA
A/µs
m
mA
KA
°C
µs
µs
A
V
V
A
2
2
s
repetitive peak rev. voltage
s t = 0.1 to 10ms, no voltage reapplied
V
t = 8.3ms
t = 8.3ms
(16.7% x
(I >
180° conduction, half sine wave
180° conduction, half sine wave @ T
t = 10ms
t = 10ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
(16.7% x
(I >
I
T
T
Gate current 1A, di
V
I
V
pk
TM
RSM
J
J
d
R
= 25°C, anode supply 12V resistive load
= T
= 50V, dv/dt = 20V/µs, Gate 0 V 100
= 1500A, T
= 0.67% V
= 750A, T
, maximum non-
x I
x I
J
max., I
T(AV)
T(AV)
1700
1900
2100
V
x I
x I
No voltage
reapplied
100% V
reapplied
No voltage
reapplied
100% V
reapplied
), T
), T
J
DRM
T(AV)
T(AV)
J
TM
= T
= 25°C, t
J
J
= T
= T
= 400A, V
, T
J
< I <
< I <
g
max, di/dt = -60A/µs,
RRM
RRM
/dt = 1A/µs
J
J
J
= 25°C
max.
max.
p
Sinusoidal half wave,
Initial T
x I
x I
= 10ms sine pulse
DRM
T(AV)
T(AV)
@ T
I
applied
RRM
www.irf.com
), T
), T
J
= T
J
/I
J
J
= T
DRM
= T
= T
mA
100
C
J
max.
= 82°C
J
J
J
max.
max.
max.
max.