VVZB135-16NO1 IXYS, VVZB135-16NO1 Datasheet - Page 4
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VVZB135-16NO1
Manufacturer Part Number
VVZB135-16NO1
Description
RECT BRIDGE 3PH 135A 1600V E2
Manufacturer
IXYS
Datasheet
1.VVZB135-16NO1.pdf
(5 pages)
Specifications of VVZB135-16NO1
Structure
Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Number Of Scrs, Diodes
3 SCRs, 3 Diodes
Voltage - Off State
1600V
Current - Gate Trigger (igt) (max)
78mA
Current - On State (it (av)) (max)
135A
Current - Hold (ih) (max)
100mA
Mounting Type
Chassis Mount
Package / Case
E2
Vrrm, Rect, (v)
1600
Idav, Rec, (a)
135
@ Th, Rect, (°c)
-
@ Tc, Rect, (°c)
85
Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
67
Vrrm, Fast Diode, (v)
1200
If(av), Fast Diode, (a)
27
Trr, Fast Diode, (ns)
40
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Non Rep. Surge 50, 60hz (itsm)
-
Current - On State (it (rms)) (max)
-
Lead Free Status / Rohs Status
Compliant
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Z
P
thJC
I
tot
T
250
200
150
100
K/W
150
125
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
75
50
25
W
A
0.001
0
0
0.0
0
Fig. 8 Transient thermal impedance junction to case (per thyristor/diode)
Fig. 6 Power dissipation versus direct output current and ambient temperature
Fig. 3 Forward current versus
30
voltage drop per leg
0.5
T
VJ
=125°C
60
1.0
0.01
T
VJ
90
= 25°C
I
V
RMS
T
1.5
120
V
A
2.0
0
0.5
I
1
1.5
0.1
TSM
2
3
5
600
500
400
300
200
100
R
A
25
0.001
0
thKA
Fig. 4 Surge overload current
K/W =
50
0.01
75
0.2
1
t
T
100
A
t
0.1
T
T
50 Hz
80 % V
VJ
VJ
s
125
= 45°C
=150°C
s
VVZB 135
RRM
150
10
1
I
TAVM
10000
I
2
1000
t
100
150
120
A
90
60
30
A
2
0
s
1
0
Fig. 7 Maximum forward current
Fig. 5 I²t versus time
V
R
R
25
= 0 V
thi
0.083
0.361
0.176
Constants for Z
0.03
/ (K/W)
T
at case temperature
(per thyristor/diode)
VJ
50
=45°C
75
VVZB 135
100 125 150
thJC
T
T
C
VJ
t
0.0005
0.008
0.094
calculation:
t
0.45
i
=150°C
/ (s)
20070912a
ms
4 - 5
10