CNA1301H Panasonic - SSG, CNA1301H Datasheet

PHOTO INTERRUPTER 1.4MM IO4-14

CNA1301H

Manufacturer Part Number
CNA1301H
Description
PHOTO INTERRUPTER 1.4MM IO4-14
Manufacturer
Panasonic - SSG
Type
Unamplifiedr
Datasheet

Specifications of CNA1301H

Sensing Distance
0.055" (1.4mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
35V
Response Time
35µs, 35µs
Mounting Type
Surface Mount
Package / Case
4-SMD
Operating Temperature
-25°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1139094
Transmissive Photosensors (Photo lnterrupters)
CNA1301H
Photo lnterrupter
For contactless SW, object detection
■ Overview
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
■ Features
■ Absolute Maximum Ratings T
■ Electrical-Optical Characteristics T
Note) 1. Input and output are practiced by electricity.
Publication date: April 2004
• Ultraminiature: 3.8 mm × 4.2 mm (height: 4.3 mm)
• Highly precise position detection: 0.15 mm
• Gap width: 1.4 mm
• Support for thin equipment (permits direct mounting on printed
Input (Light
emitting diode) Forward current
Output (Photo Collector-emitter voltage
transistor)
Temperature
Input
characteristics Reverse current
Output
characteristics (Base open)
Transfer
characteristics Collector-emitter saturation voltage V
CNA1301H is an ultraminiature, highly reliable transmissive
circuit board)
2. This device is designed be disregarded radiation.
3. * : Switching time measurement circuit
50Ω
Forward voltage
Collector-emitter cutoff current
Collector current
Rise time
Fall time
Parameter
Parameter
Reverse voltage
Power dissipation
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Sig. in
*
*
V
R
CC
L
Sig. out
* 1
* 2
Symbol
Symbol
a
V
V
I
T
T
CE(sat)
= 25°C
V
V
P
P
CEO
I
I
I
I
CEO
ECO
t
t
opr
(Input pulse)
(Output pulse)
C
stg
R
C
F
D
C
r
f
R
F
a
−40 to +100
= 25°C ± 3°C
−25 to +85
I
V
V
V
I
V
R
F
F
Rating
L
R
CE
CE
CC
= 20 mA
= 10 mA, I
= 1 000 Ω
= 3 V
SHG00021BED
50
75
35
20
75
6
6
= 20 V
= 5 V, I
= 5 V, I
t
r
F
C
C
= 5 mA
Conditions
Unit
= 0.1 mA
mW
mW
mA
mA
= 50 µA
°C
°C
V
V
V
t
f
90%
10%
Note) * 1: Input power derating ratio is 1.0 mW/°C at
t
t
r
f
* 2: Output power derating ratio is 1.33 mW/°C
(Note) 1. Tolerance unless otherwise specified is ±0.3
: Rise time
: Fall time
T
at T
2.0
Not solderd
Optical
a
Resin
the rest
center
±0.5
1.0 max.
≥ 25°C.
2. ( ) Dimension is reference
1.2
a
2-1.7
≥ 25°C.
1
2
±0.1
Min
100
3-1.4
2.0
4.2
A
A'
2-φ0.7
Typ
PISMW104-001 Package
1.2
±0.1
35
35
3
4
SEC. A-A'
1 300
Max
100
1.4
0.4
10
Slit width
3.8
1: Anode
2: Cathode
3: Collector
4: Emitter
1.5
Unit: mm
(0.3)
±0.1
(C0.3)
Unit
µA
µA
nA
µs
µs
V
V
1

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CNA1301H Summary of contents

Page 1

... Transmissive Photosensors (Photo lnterrupters) CNA1301H Photo lnterrupter For contactless SW, object detection ■ Overview CNA1301H is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package. ■ Features • ...

Page 2

... CNA1301H  − Ambient temperature T (°  25° Forward current I (mA) F  CEO −1 10 −2 10 −3 10 −4 10 −5 10 − Ambient temperature T (°  25° 100 0 0.4 0.8 1.2 1.6 2.0 Forward voltage V (V) F  25° Collector-emitter voltage V CE  25° kΩ ...

Page 3

... C 100 = 25° Criterion Distance d (mm) ∆I  d (2) C 100 = 25° Criterion 0.5 1.0 1.5 2.0 2.5 Distance d (mm) SHG00021BED CNA1301H 3 ...

Page 4

Caution for Safety DANGER Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any ...

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