EE-SX1106 Omron, EE-SX1106 Datasheet
EE-SX1106
Manufacturer Part Number
EE-SX1106
Description
OPTO SENSOR SLOT TYPE 3MM
Manufacturer
Omron
Type
Unamplifiedr
Specifications of EE-SX1106
Sensing Distance
0.118" (3mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
30mA
Voltage - Collector Emitter Breakdown (max)
30V
Response Time
10µs, 10µs
Mounting Type
Through Hole
Package / Case
PCB Mount
Operating Temperature
-25°C ~ 85°C
Aperture Width
0.4 mm
Termination Style
Solder Pin
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
30V
Opto Case Style
Through Hole
No. Of Pins
4
Input Current Max
50mA
Body Style
Rectangular
Brand/series
SX1
Current, Switching
30 mA
Function
Vane
Indicator
LED
Light Source
Infrared
Output
NPN
Primary Type
Photoelectric
Range, Measurement
3 mm
Sensing Mode
Transmissive
Technology
Photoelectric
Temperature, Operating
-25 to +85 °C
Termination
Solder
Voltage, Supply
1.6 V
Voltage, Switching
30 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
EESX1106
OR635
OR635
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EE-SX1106
Manufacturer:
NXP
Quantity:
882
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Electrical and Optical Characteristics (Ta = 25 C)
60
Emitter
Detector
Rising time
Falling time
A
K
C
E
Terminal No.
Photomicrosensor (Transmissive)
EE-SX1106
Four, 0.5
Internal Circuit
Be sure to read Precautions on page 25.
EE-SX1106
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
Two, C0.7
Anode
Cathode
Collector
Emitter
Two, C0.2
Name
5 min.
Item
5.4
Unless otherwise specified,
the tolerances are 0.2 mm.
Photomicrosensor (Transmissive)
Four, 0.2
Two, R1
1.4
1
0
0.1
Optical
axis
0
0.1
dia
dia
V
I
I
I
I
V
tr
tf
R
L
D
LEAK
P
P
F
CE
Symbol
(sat)
Gate
1.3 V typ., 1.6 V max.
10 A max.
950 nm typ.
0.2 mA min.
500 nA max.
---
0.4 V max.
800 nm typ.
10 s typ.
10 s typ.
■ Features
• Ultra-compact with a slot width of 3 mm.
• PCB mounting type.
• High resolution with a 0.4-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25 C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
Emitter
Detector
Ambient tem-
perature
Soldering temperature
2. Complete soldering within 3 seconds.
ature exceeds 25 C.
Value
Item
Forward current
Pulse forward cur-
rent
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipa-
tion
Operating
Storage
I
V
I
I
V
---
I
V
V
I
V
I
F
F
F
F
F
F
R
CE
CE
CC
CC
= 50 mA
= 50 mA
= 20 mA, V
= 20 mA, I
= 20 mA
= 20 mA
= 5 V
= 10 V, 0 lx
= 5 V
= 5 V, R
= 5 V, R
I
I
V
V
V
I
P
Topr
Tstg
Tsol
F
FP
C
Symbol
R
CEO
ECO
C
L
L
L
Condition
CE
= 0.1 mA
= 100
= 100
= 5 V
50 mA
(see note 1)
---
5 V
30 V
4.5 V
30 mA
80 mW
(see note 1)
–25 C to 85 C
–30 C to 85 C
260 C
(see note 2)
,
,
Rated value
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EE-SX1106 Summary of contents
Page 1
... Leakage current Collector–Emitter saturated volt- age Peak spectral sensitivity wave- length Rising time Falling time 60 EE-SX1106 Photomicrosensor (Transmissive) ■ Features • Ultra-compact with a slot width of 3 mm. • PCB mounting type. • High resolution with a 0.4-mm-wide aperture. ■ Absolute Maximum Ratings ( Emitter ...
Page 2
... Voltage Characteristics (Typical) Forward voltage V (V) F Relative Light Current vs. Ambi- ent Temperature Characteristics (Typical Ambient temperature Sensing Position Characteristics (Typical Distance d (mm) EE-SX1106 Photomicrosensor (Transmissive) Light Current vs. Forward Current Characteristics (Typical Forward current I (mA) F Dark Current vs. Ambient Temperature Characteristics (Typical = Ambient temperature ...