RPI-579N1E Rohm Semiconductor, RPI-579N1E Datasheet
RPI-579N1E
Manufacturer Part Number
RPI-579N1E
Description
PHOTOINTERRUPTER ENERGYSAVING
Manufacturer
Rohm Semiconductor
Datasheet
1.RPI-579N1E.pdf
(2 pages)
Specifications of RPI-579N1E
Output Collector Emitter Voltage (detector)
30 V
Maximum Reverse Voltage (emitter)
5 V
Maximum Collector Current (detector)
30 mA
Slot Width
5 mm
Output Device
Phototransistor
Power Dissipation
70 mW
Forward Voltage
1.4 V
Maximum Fall Time
10 us
Maximum Operating Temperature
+ 85 C
Maximum Rise Time
10 us
Minimum Operating Temperature
- 25 C
Mounting Style
Through Hole
Wavelength
800 nm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
846-1022
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RPI-579N1E
Manufacturer:
ROHM Semiconductor
Quantity:
1 000
RPI-579N1E
∗ 1mm from the body bottom.
Absolute maximum ratings (Ta=25°C)
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristics curves
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Soldering temperture
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Collector-emitter saturation voltage
Response time
Peak light emitting wavelength
Response time
Maximum sensitivity wavelength
100
Fig.1 Relative output vs. distance ( )
Parameter
100
Fig.4 Relative output vs. distance ( )
80
60
40
20
80
60
40
20
0
0
Parameter
0
0
1
1
DISTANCE : d (mm)
DISTANCE : d (mm)
2
2
Rise time
Fall time
3
3
4
4
Symbol
V
V
Topr
Tstg
Tsol
V
P
P
I
CEO
ECO
I
F
C
5
R
D
C
5
Photointerrupter, General type
d
Symbol
V
tr tf
I
CE(sat)
V
CEO
λ
λ
λ
−25 to +85
−40 to +85
I
I
tr
tf
R
C
P
F
P
P
260 / 3
Limits
4.5
35
70
30
30
80
5
Min.
0.5
−
−
−
−
−
−
−
−
−
−
∗
100
90
80
70
60
50
40
30
20
10
40
35
30
25
20
15
10
−40
0
800
5
0
Typ.
800
850
-40
1.4
0.1
10
10
10
−
−
−
°C / s
Unit
mW
mW
Fig.5 Power dissipation / collector power
mA
mA
°C
°C
Fig.2 Forward current falloff
V
V
V
AMBIENT TEMPERATURE : Ta (°C)
AMBIENT TEMPERATURE : Ta (°C)
−20
-20
Max.
dissipation vs. ambient temperature
1.7
0.5
0.5
10
−
−
−
−
−
−
−
0
0
20
20
Unit
µA
µA
nm
mA
nm
nm
µs
µs
µs
V
V
40
40
I
V
V
V
I
V
I
∗ Non-coherent Infrared light emitting diode used.
F
F
F
60
V
∗ This product is not designed to be protected against electromagnetic wave.
= 10mA
R
CE
CE
= 10mA, I
CC
= 10mA
60
= 5V
CC
= 10V
= 5V, I
= 5V, I
= 5V, I
80
80
F
F
= 10mA
C
= 10mA, R
C
100
100
= 0.1mA
= 1mA, R
L
L
= 100Ω
= 100Ω
Printers
Facsimiles
AV equipment
1) Heat resistance (170°C).
2) Small gap (0.5mm) and good accuracy.
3) Quick response time.
4) Filter against visible ray is built-in.
5) Kinked forming.
Applications
Features
Conditions
Fig.3 Forward current vs. forward voltage
140
120
100
35
30
25
20
15
10
5
0
80
60
40
20
-30
0
−
−
0
-20
Fig.6 Relative output vs. ambient
AMBIENT TEMPERATURE : Ta (°C)
FORWARD VOLTAGE : V
-10
0.5
0
temperature
10 20 30 40 50 60 70 80 90
1
1.5
F
2
(
V
)
2.5
Fig.7 Collector current vs. forward current
10
10
8
6
4
2
0
9
8
7
6
5
4
3
2
1
0
0
Dimensions (Unit : mm)
0
COLLECTOR-EMITTER VOLTAGE : V
Fig.10 Output characteristics
1
FORWARD CURRENT : I
5
2
10
3
4
15
2.35±0.1
5
20
6
4-0.4
I
I
I
I
25
F
F
F
7
F
=15mA
=10mA
=25mA
=20mA
I
F
F
I
=30mA
F
=5mA
(mA)
13.8
Gap
(10)
14(Bottom)
8
5
30
CE
9
A
A
(
V)
35
10
6.6±0.1
(4-0.85)
Fig.11 Response time measurement circuit
2-φ0.7±0.1
200
100
50
20
10
t
t
t
d
r
f
:
:
:
Delay time
Rise time (time for output current to rise
from 10% to 90% of peak current)
Fall time (time for output current to fall
from 90% to 10% of peak current)
Optical
10
center
Input
Fig.8 Response time vs.
COLLECTOR CURRENT : Ic (µA)
20
collector current
2-0.45
V
50 100
Through hole
CC
R
0.5
L
t
f
Output
Output
Cathode
Anode
t
r
Input
200
t
r
t
d
t
r
500 1000
t
0.8
(2.54)
f
t
f
t
R
R
r
R
L
L
L
=5kΩ
=2kΩ
=1kΩ
2000
Collector
Emitter
t
f
90
10
8.95
%
%
Notes:
1.
2. Measurement in the bracket is
3. Dimension in parenthesis are
4. Please be carefully not to receive
10
2.35
Unspecified tolerance
shall be ±0.2 .
that of lead pin at base the mold.
show for reference.
external disturbing light because
the top and back face emitter and
detector element isn't covered by case.
1000
100
0.1
10
1
Fig.9 Dark current vs. ambient
25
AMBIENT TEMPERATURE : Ta (°C)
temperature
2-φ0.8
4-φ0.8
0
25
+0.05
−0
50
V
V
V
CE
CE
CE
=30V
=20V
=10V
75
100
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RPI-579N1E Summary of contents
Page 1
... RPI-579N1E Photointerrupter, General type Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Forward current Reverse voltage Power dissipation Collector-emitter voltage CEO Emitter-collector voltage V 4.5 V ECO Collector current Collector power dissipation −25 to +85 °C Operating temperature Topr −40 to +85 °C Storage temperature Tstg ° ...
Page 2
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...