GP1S95 Sharp Microelectronics, GP1S95 Datasheet - Page 2

• Manufacturer Part Number: GP1S95
• Description: PHOTOINTERRUPTER SLOT 1.6MM PCB
• Manufacturer: Sharp Microelectronics
• Type: Unamplifiedr

Specifications of GP1S95

• Sensing Distance: 0.063" (1.6mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Response Time: 35µs, 35µs
• Mounting Type: Through Hole
• Package / Case: PCB Mount
• Operating Temperature: -25°C ~ 85°C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 425-1062-5

Fig.3 Forward Current vs. Forward Voltage
Fig.1 Forward Current vs. Ambient
Input
Output
Transfer
charac-
teristics
Electro-optical Characteristics
Temperature
Forward voltage
Reverse current
Collector dark current
Collector current
Response time
Collector-emitter saturation voltage
500
200
100
50
20
10
60
50
40
30
20
10
Parameter
0
5
2
1
0
25
0.5
0
T
Ambient temperature T
Rise time
Fall time
a
Forward voltage V
75 C
50 C
1
25
1.5
Symbol
V
I
CE(sat)
V
CEO
I
I
50
t
t
R
C
r
f
F
F
2
(V)
a
( C)
25 C
0 C
25 C
75 85
2.5
100
3
V
I
F
V
CE
CE
10mA, I
R
Conditions
I
V
5V, I
L
F
V
5V, I
CE
R
20mA
1 000
3V
20V
C
F
C
100 A
Fig.2 Power Dissipation vs. Ambient
5mA
Fig.4 Collector Current vs. Forward Current
50 A
Temperature
100
1.20
1.08
0.96
0.84
0.72
0.60
0.48
0.36
0.24
0.12
80
75
60
40
20
15
0
0
25
0
P, P
P
2
tot
c
MIN.
0
50
4
Ambient temperature T
Forward current I
6
25
8
TYP.
1.2
35
35
10 12
50
F
(mA)
a
14 16
( C)
MAX.
100
300
100
100
1.4
0.4
10
75 85
V
T
a
CE
25 C
5V
18
(Ta 25 C)
100
20
Unit
nA
V
V
A
A
s
s