TCRT1000 Vishay, TCRT1000 Datasheet - Page 2

• Manufacturer Part Number: TCRT1000
• Description: SENSOR OPTO TRANS 4MM REFL THPCB
• Manufacturer: Vishay

Specifications of TCRT1000

• Sensing Distance: 0.157" (4mm)
• Sensing Method: Reflective
• Voltage - Collector Emitter Breakdown (max): 32V
• Current - Collector (ic) (max): 50mA
• Current - Dc Forward (if): 50mA
• Output Type: Phototransistor
• Mounting Type: Through Hole
• Package / Case: PCB Mount
• Operating Temperature: -40°C ~ 85°C
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Wavelength: 940 nm (Min)
• Output Collector Emitter Voltage (detector): 32 V
• Maximum Reverse Voltage (emitter): 5 V
• Maximum Collector Current (detector): 50 mA
• Output Device: Phototransistor
• Power Dissipation: 200 mW
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 32V
• Opto Case Style: Through Hole
• No. Of Pins: 4
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Response Time: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1031

TCRT1000, TCRT1010
Vishay Semiconductors
Note
(1)
ABSOLUTE MAXIMUM RATINGS
Notes
(1)
(2)
(3)
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
BASIC CHARACTERISTICS
PARAMETER
SENSOR
Collector current
Cross talk current
Collector emitter saturation
voltage
INPUT (EMITTER)
Forward voltage
Radiant intensity
Peak wavelength
Virtual source diameter
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector dark current
T
T
Measured with the ‘Kodak neutral test card", white side with 90 % diffuse reflectance
Measured without reflecting medium
amb
amb
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
95 11071
300
200
100
0
0
IR - diode
Coupled device
Phototransistor
T
amb
25
- Ambient Temperature (°C)
50
V
Method: 63 % encircled energy
CE
For technical questions, contact:
V
CE
I
= 5 V, I
F
V
I
F
75
= 20 V, I
CE
= 20 mA, I
TEST CONDITION
d = 1 mm (figure 2)
d = 1 mm (figure 2)
TEST CONDITION
(1)
= 50 mA, t
= 5 V, I
T
I
I
I
F
amb
E
I
F
F
C
Reflective Optical Sensor with
= 100 mA
= 100 µA
= 50 mA
= 20 mA, (figure 1)
= 1 mA
100
F
≤ 25 °C
(1)
= 0 A, E = 0 lx
F
C
p
= 20 mA,
= 0.1 mA,
= 20 ms
Transistor Output
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SYMBOL
V
CEsat
I
V
V
I
CX
I
C
CEO
V
λ
CEO
ECO
I
d
SYMBOL
e
P
(2)
F
(3)
V
V
(2)
P
CEO
ECO
I
T
C
V
j
MIN.
940
0.3
32
5
VALUE
TYP.
1.25
100
100
0.5
1.2
32
50
5
Document Number: 83752
MAX.
200
0.3
1.6
75
1
Rev. 1.7, 17-Aug-09
UNIT
mW
mA
°C
V
V
mW/sr
UNIT
mm
mA
nm
µA
nA
V
V
V
V