TCRT5000L Vishay, TCRT5000L Datasheet - Page 2

• Manufacturer Part Number: TCRT5000L
• Description: SENSOR OPTO TRANS 15MM REFL PCB
• Manufacturer: Vishay

Specifications of TCRT5000L

• Sensing Distance: 0.591" (15mm)
• Sensing Method: Reflective
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 100mA
• Current - Dc Forward (if): 60mA
• Output Type: Phototransistor
• Mounting Type: Through Hole
• Package / Case: PCB Mount
• Operating Temperature: -25°C ~ 85°C
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Wavelength: 940 nm (Min)
• Output Collector Emitter Voltage (detector): 70 V
• Maximum Reverse Voltage (emitter): 5 V
• Maximum Collector Current (detector): 100 mA
• Output Device: Phototransistor
• Power Dissipation: 200 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Response Time: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1034-5

TCRT5000, TCRT5000L
Vishay Semiconductors
Note
(1)
ABSOLUTE MAXIMUM RATINGS
Note
(1)
(2)
(3)
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
SENSOR
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
BASIC CHARACTERISTICS
PARAMETER
INPUT (EMITTER)
Forward voltage
Junction capacitance
Radiant intensity
Peak wavelength
Virtual source diameter
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector dark current
SENSOR
Collector current
Collector emitter saturation
voltage
T
T
See figure 3
Test surface: mirror (Mfr. Spindler a. Hoyer, Part No. 340005)
amb
amb
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
95 11071
300
200
100
0
0
IR - diode
Coupled device
Phototransistor
T
amb
25
- Ambient Temperature (°C)
50
Method: 63 % encircled energy
For technical questions, contact:
V
CE
2 mm from case, t ≤ 10 s
I
F
V
I
F
= 20 V, I
V
CE
= 10 mA, I
TEST CONDITION
TEST CONDITION
(1)
= 60 mA, t
R
75
= 5 V, I
T
T
= 0 V, f = 1 MHz
I
I
D = 12 mm
D = 12 mm
I
F
amb
amb
e
I
F
C
Reflective Optical Sensor with
= 100 mA
= 100 µA
= 60 mA
= 1 mA
F
≤ 55 °C
≤ 25 °C
(1)
= 0 A, E = 0 lx
F
C
100
p
= 10 mA,
= 0.1 mA,
= 20 ms
Transistor Output
[e-mail]
V
SYMBOL
CEsat
I
C
V
V
I
CEO
V
λ
CEO
ECO
(2) (3)
C
I
d
SYMBOL
e
P
F
j
(2) (3)
V
V
T
T
P
T
P
CEO
ECO
I
T
amb
C
stg
tot
sd
V
j
MIN.
940
0.5
70
7
- 25 to + 100
- 25 to + 85
VALUE
TYP.
1.25
100
100
100
200
260
2.1
70
17
10
5
1
Document Number: 83760
MAX.
200
1.5
2.1
0.4
21
Rev. 1.7, 17-Aug-09
UNIT
mW
mW
mA
°C
°C
°C
°C
V
V
mW/sr
UNIT
mm
mA
nm
pF
nA
V
V
V
V