EE-SY191 Omron, EE-SY191 Datasheet - Page 3

OPTO SENSOR HORZ REFLECT TYPE

EE-SY191

Manufacturer Part Number
EE-SY191
Description
OPTO SENSOR HORZ REFLECT TYPE
Manufacturer
Omron
Datasheet

Specifications of EE-SY191

Sensing Distance
0.178" (4.5mm)
Sensing Method
Reflective
Voltage - Collector Emitter Breakdown (max)
30V
Current - Collector (ic) (max)
20mA
Current - Dc Forward (if)
50mA
Output Type
Phototransistor
Response Time
30µs, 30µs
Mounting Type
Through Hole, Right Angle
Package / Case
PCB Mount
Operating Temperature
-25°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EESY191
OR565
Note: 1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
EE-SY190/191
Item
Emitter
Receiver
Rising time (See Note 2.)
Falling time (See Note 2.)
CHARACTERISTICS (T
2. The illustration below shows the rising time, tr, and the falling time, tf.
Input
Output
0
0
tr
Forward voltage
Reverse current
Peak emission wavelength λ
Light current (See Note 1.) I
Dark current
Leakage current
Peak spectral sensitivity
wavelength
90%
10%
A
tf
= 25°C (77°F))
t
t
Symbol
V
I
I
I
λ
tr
tf
R
L
D
LEAK
P(L)
P(P)
F
Input
Value
1.2 V typ., 1.5 V max.
10 µA max.
940 nm typ.
50 µA min., 180 µA typ.,
600 µA max.
2 nA typ., 100 nA max.
1 µA max.
850 nm typ.
30 µs typ.
30 µs typ.
R
L
V
Output
CC
Condition
I
V
I
I
White paper with a reflection
factor of 90%, d = 4.5 mm
(See Note 1.)
V
I
object
V
V
V
F
F
F
F
R
CE
CE
CC
CC
= 30 mA
= 30 mA
= 20 mA, V
= 20 mA, V
= 4 V
= 5 V, 0 x
=5 V
= 5 V, R
= 5 V, R
L
L
EE-SY190/191
CE
CE
= 1 kΩ, I
= 1 kΩ, I
= 5 V
= 5 V without
L
L
= 200 µA
= 200 µA

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