NTLUD3A260PZTAG ON Semiconductor, NTLUD3A260PZTAG Datasheet - Page 2

• Manufacturer Part Number: NTLUD3A260PZTAG
• Description: POWER MOSFET 20V 2A 200 M UDFN6
• Manufacturer: ON Semiconductor

Specifications of NTLUD3A260PZTAG

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-UFDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

THERMAL RESISTANCE RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
DRAIN-SOURCE DIODE CHARACTERISTICS
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
V
J
V
V
(BR)DSS
Symbol
Q
= 25°C unless otherwise specified)
V
GS(TH)
R
t
(BR)DSS
Q
Parameter
t
d(OFF)
C
C
VSD
I
I
d(ON)
GS(TH)
C
G(TOT)
Q
Q
Q
GSS
DS(on)
t
DSS
g
G(TH)
RR
t
t
OSS
RSS
t
t
ISS
FS
GD
a
b
GS
r
f
RR
/T
/T
J
J
http://onsemi.com
V
I
V
V
S
DS
V
V
GS
V
GS
V
V
= −0.6 A
GS
I
GS
V
V
V
V
GS
V
V
D
= −20 V
GS
GS
GS
GS
I
2
DS
GS
GS
= 0 V,
DS
= 0 V,
V
D
= −250 mA, ref to 25°C
= 0 V, dis/dt = 100 A/ms,
= −4.5 V, V
GS
= −4.5 V, V
= −1.8 V, I
= −1.5 V, I
= −1.5 A, R
Test Condition
= −4.5 V, I
= −2.5 V, I
= 0 V, V
= 0 V, I
= V
= −10 V, I
V
= 0 V, f = 1 MHz,
I
I
S
D
DS
DS
= −1.0 A
= −1.7 A
, I
= −10 V
D
GS
D
= −250 mA
DD
D
D
DS
D
= −250 mA
D
D
G
= ±8.0 V
= −0.24 A
= −0.18 A
= −1.5 A
T
= −2.0 A
= −1.2 A
T
T
= −10 V,
T
= −10 V;
= 1 W
J
J
J
J
= 125°C
= 125°C
= 25°C
= 25°C
2
, 2 oz. Cu.
Min
−20
−0.4
Symbol
R
R
R
17.4
32.3
0.68
10.6
Typ
−10
149
θJA
θJA
θJA
160
226
300
390
300
0.8
8.7
1.9
2.8
3.7
4.2
0.3
0.7
1.1
74
5.1
34
29
Max
−1.0
−10
±10
−1.0
1.2
200
290
390
650
Max
155
100
245
mV/°C
mV/°C
Units
Units
°C/W
mA
mA
mW
ns
ns
nC
nC
pF
V
V
V
S