NTLUS3A90PZTBG ON Semiconductor, NTLUS3A90PZTBG Datasheet

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NTLUS3A90PZTBG

Manufacturer Part Number
NTLUS3A90PZTBG
Description
POWER MOSFET 20V 3A 60 MO UDFN6
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTLUS3A90PZTBG

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
62 mOhm @ 4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
950pF @ 10V
Power - Max
600mW
Mounting Type
Surface Mount
Package / Case
6-UFDFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTLUS3A90PZTBG
Manufacturer:
ON Semiconductor
Quantity:
2 200
NTLUS3A90PZ
Power MOSFET
−20 V, −5.0 A, mCoolt Single P−Channel,
ESD, 1.6x1.6x0.55 mm UDFN Package
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
2. Surface-mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 2
MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipa-
tion (Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Conduction
Compliant
Products, such as Cell Phones, PMP, DSC, GPS, and others
UDFN Package with Exposed Drain Pads for Excellent Thermal
Low Profile UDFN 1.6x1.6x0.55 mm for Board Space Saving
Lowest RDS(on) in 1.6x1.6 Package
ESD Protected
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
High Side Load Switch
PA Switch and Battery Switch
Optimized for Power Management Applications for Portable
[2 oz] including traces).
of 30 mm
2
, 2 oz. Cu.
Parameter
Steady
Steady
Steady
t ≤ 5 s
t ≤ 5 s
State
State
State
(T
J
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
T
tp = 10 ms
A
A
A
A
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
V
T
V
I
P
P
T
STG
T
DSS
DM
I
I
I
GS
D
D
S
J
D
D
L
,
Value
-55 to
−0.84
±8.0
−4.0
−2.9
−5.0
−2.6
−1.9
−20
−17
150
260
1.5
2.3
0.6
1
Units
°C
°C
W
W
V
V
A
A
A
A
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
V
(BR)DSS
−20 V
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
6
AD = Specific Device Code
M = Date Code
G = Pb−Free Package
G
http://onsemi.com
P−Channel MOSFET
140 mW @ −1.8 V
230 mW @ −1.5 V
CASE 517AU
62 mW @ −4.5 V
95 mW @ −2.5 V
mCOOLt
R
UDFN6
MOSFET
(Top View)
DS(on)
Publication Order Number:
MAX
D
S
NTLUS3A90PZ/D
1
MARKING
DIAGRAM
AD MG
I
D
−5.0 A
G
MAX

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NTLUS3A90PZTBG Summary of contents

Page 1

NTLUS3A90PZ Power MOSFET −20 V, −5.0 A, mCoolt Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction • Low Profile UDFN 1.6x1.6x0.55 mm for Board Space Saving • Lowest RDS(on) ...

Page 2

THERMAL RESISTANCE RATINGS Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient – t ≤ (Note 3) Junction-to-Ambient – Steady State min Pad (Note 4) ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero ...

Page 3

V = −4 −4.0 V −3 −3.0 V −2 0.5 1.0 1.5 2.0 2.5 3.0 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region ...

Page 4

C iss 800 400 C oss C rss −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 V = −4 − ...

Page 5

... DEVICE ORDERING INFORMATION Device NTLUS3A90PZTAG NTLUS3A90PZTBG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS V = − Single Pulse T = 25° ...

Page 6

... NOTE 3 0.05 C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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