MBR2H100SFT3G ON Semiconductor, MBR2H100SFT3G Datasheet - Page 3

• Manufacturer Part Number: MBR2H100SFT3G
• Description: DIODE SCHOTTKY 2A 100V SOD-123FL
• Manufacturer: ON Semiconductor

Specifications of MBR2H100SFT3G

• Voltage - Forward (vf) (max) @ If: 840mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 40µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

0.00001
0.0001
100
0.001
0.1
10
0.01
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
0.1
10
0
120
0
1
0
Square Wave
dc
V
125
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.2
10
Figure 1. Typical Forward Voltage
130
Figure 3. Typical Reverse Current
20
T
Figure 5. Current Derating
0.4
135
L
V
, LEAD TEMPERATURE (°C)
R
30
, REVERSE VOLTAGE (V)
140
0.6
40
145
50
150°C
125°C
150
25°C
0.8
150°C 125°C 25°C
60
155
1.0
TYPICAL CHARACTERISTICS
70
160
R
qJL
165
= 23°C/W
80
1.2
http://onsemi.com
170
90
1.4
175
100
3
0.00001
0.0001
0.001
0.01
100
0.1
0.1
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
10
1
3
2
1
0
1
0
0
0
T
0.2
J
V
10
= 175°C
0.2
F
0.4
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 6. Forward Power Dissipation
Figure 2. Maximum Forward Voltage
Figure 4. Maximum Reverse Current
I
O
0.6
, AVERAGE FORWARD CURRENT (A)
20
0.4
0.8
V
R
30
, REVERSE VOLTAGE (V)
1
0.6
1.2
40
1.4
0.8
50
150°C
125°C
25°C
1.6
150°C 125°C 25°C
1.8 2 2.2 2.4 2.6 2.8 3
60
1.0
Square Wave
70
1.2
80
1.4
dc
90
100
1.6