FDME1023PZT Fairchild Semiconductor, FDME1023PZT Datasheet - Page 3

• Manufacturer Part Number: FDME1023PZT
• Description: MOSFET P-CH 20V 2.6A 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME1023PZT

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 142 mOhm @ 2.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 405pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 95 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 2.3 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Forward Transconductance Gfs (max / Min): 7 S
• Gate Charge Qg: 5.5 nC
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C1
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On Resistance
0.0
6
4
2
0
6
4
2
0
Figure 1.
0
-75
Figure 5. Transfer Characteristics
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
GS
V
I
-50
D
= -3 V
GS
= -4.5 V
vs Junction Temperature
V
= -2.3 A
DS
= -4.5 V
-V
-V
-25
= -5 V
T
0.5
0.5
V
On Region Characteristics
GS
DS
J
GS
,
, GATE TO SOURCE VOLTAGE (V)
,
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
= -1.5 V
0
T
J
= 25
V
V
GS
25
T
GS
μ
J
1.0
1.0
o
= - 1.8 V
s
= 150
C
= -2.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
o
J
C
= 25 °C unless otherwise noted
75
T
1.5
1.5
J
= -55
100 125 150
o
C )
o
C
μ
s
2.0
2.0
3
0.001
0.01
500
400
300
200
100
0.1
10
1
0
3
2
1
0
Figure 2.
Figure 4.
1.0
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
-V
1.5
= 0 V
0.2
SD
= -1.5 V
T
-V
J
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
On-Resistance vs Gate to
= 150
GS
-I
Source Voltage
Source to Drain Diode
D
2.0
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.4
o
V
C
2
GS
= -1.8 V
2.5
V
GS
T
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
= -2.5 V
J
J
μ
= 25
= 125
s
T
3.0
J
= -55
o
C
T
I
o
D
0.8
C
J
= -2.3 A
4
= 25
V
o
3.5
C
GS
= -3 V
o
V
C
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GS
1.0
4.0
= -4.5 V
μ
s
4.5
1.2
6