NTMD6N03R2G ON Semiconductor, NTMD6N03R2G Datasheet - Page 2

• Manufacturer Part Number: NTMD6N03R2G
• Description: MOSFET PWR N-CH DL 6A 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD6N03R2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 32 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.032 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMD6N03R2GOS; NTMD6N03R2GOS; NTMD6N03R2GOSTR

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 3 & 4)
BODY−DRAIN DIODE RATINGS (Note 3)
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Diode Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I
(V
(V
(V
(V
(V
(V
(V
(V
S
GS
DS
DS
GS
DS
GS
GS
DS
= 5 A, dI
= 0 Vdc, I
= 24 Vdc, V
= 24 Vdc, V
= ±20 Vdc, V
= V
= 10 Vdc, I
= 4.5 Vdc, I
= 15 Vdc, I
GS
S
, I
/dt = 100 A/ms, V
D
D
= 250 mAdc)
D
D
D
= 250 mA)
GS
GS
= 6 Adc)
= 5.0 Adc)
DS
= 3.9 Adc)
= 0 Vdc, T
= 0 Vdc, T
= 0 Vdc)
Characteristic
GS
J
J
= 25°C)
= 125°C)
= 0 V)
(I
(T
S
C
= 1.7 Adc, V
(V
= 25°C unless otherwise noted)
(I
DS
(V
(V
S
(I
DD
DD
= 1.7 Adc, V
= 24 Vdc, V
dI
S
(V
V
S
= 5 A, V
= 15 Vdc, I
= 15 Vdc, I
f = 1.0 MHz)
V
V
GS
/dt = 100 A/ms)
DS
R
R
GS
GS
I
D
G
G
GS
= 10 Vdc,
= 15 Vdc,
= 5 A)
= 6 W)
= 4.5 V,
= 6 W)
= 10 V,
http://onsemi.com
= 0 V, T
GS
GS
GS
D
D
= 0 V,
= 0 Vdc,
= 1 A,
= 1 A,
= 0 V)
J
2
= 150°C)
V
Symbol
R
V
(BR)DSS
I
I
C
t
t
t
t
DS(on)
C
Q
GS(th)
C
V
g
DSS
GSS
d(on)
d(off)
d(on)
d(off)
Q
Q
Q
Q
t
FS
oss
t
t
rss
t
t
t
t
SD
iss
RR
rr
a
b
r
f
r
f
T
1
2
3
Min
1.0
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.024
0.030
0.015
Typ
0.75
0.62
680
210
1.8
4.6
30
10
70
2.4
5.0
4.3
22
45
45
13
27
22
34
19
26
11
15
−
−
−
−
9
0.032
0.040
Max
100
950
300
135
1.0
2.5
20
1.0
18
40
80
80
30
50
40
70
30
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
pF
nC
mC
W
ns
ns
ns