DMN3730UFB4-7 Diodes Zetex, DMN3730UFB4-7 Datasheet - Page 3

• Manufacturer Part Number: DMN3730UFB4-7
• Description: MOSFET N-CH 30V 750MA DFN
• Manufacturer: Diodes Zetex

Specifications of DMN3730UFB4-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 750mA
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 64.3pF @ 25V
• Power - Max: 470mW
• Mounting Type: Surface Mount
• Package / Case: 3-XFDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN3730UFB4-7TR

DMN3730UFB4
Document number: DS35017 Rev. 4 - 2
2.0
1.5
1.0
0.5
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-50 -25
0
0
Fig. 5 On-Resistance Variation with Temperature
V , DRAIN-SOURCE VOLTAGE (V)
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
DS
V
Fig. 1 Typical Output Characteristic
0.4
T , AMBIENT TEMPERATURE (°C)
GS
1
Fig. 3 Typical On-Resistance
V
A
GS
V
= 2.0V
V
GS
0
= 2.5V
GS
V
= 3.0V
GS
= 4.5V
= 10V
0.8
25
2
V
GS
50
= 1.8V
1.2
V
I = 1.0A
GS
3
D
75
= 4.5V
V
V
V
GS
GS
GS
100
= 1.5V
= 2.5V
= 4.5V
I = 500mA
1.6
V
D
GS
4
= 2.5V
125 150
5
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0.8
0.6
0.4
0.2
2.0
1.5
1.0
0.5
0.8
0.6
0.4
0.2
0
0
0
-50 -25
0
0
Fig. 6 On-Resistance Variation with Temperature
V
V
GS
DS
0.25
T = 125°C
0.5
V
Fig. 2 Typical Transfer Characteristic
T , AMBIENT TEMPERATURE (°C)
A
= 4.5V
vs. Drain Current and Temperature
= 5V
GS
V
I = 500mA
A
D
T = 150°C
GS
A
Fig. 4 Typical On-Resistance
, GATE-SOURCE VOLTAGE (V)
0
= 2.5V
I , DRAIN CURRENT (A)
D
0.5
V
1
I = 1.0A
GS
D
25
= 4.5V
T = -55°C
A
0.75
1.5
50
T = 25°C
A
T = 85°C
A
75
DMN3730UFB4
2
1
100
T = 125°C
T = 85°C
T = 150°C
T = -55°C
T = 25°C
A
A
A
A
A
1.25
2.5
© Diodes Incorporated
125 150
March 2011
1.5
3