STL85N6F3 STMicroelectronics, STL85N6F3 Datasheet - Page 5

• Manufacturer Part Number: STL85N6F3
• Description: MOSFET N-CH 60V 19A POWERFLAT5X6
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL85N6F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3400pF @ 25V
• Power - Max: 4W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (6 x 5)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10882-2

STL85N6F3
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 2)
I
I
di/dt = 100 A/µs,
V
DD
SD
SD
G
DD
=4.7 Ω, V
Test conditions
=15 V, I
Test conditions
= 19 A, V
= 19 A,
=25 V, Tj=150°C
D
GS
= 8.5 A,
GS
=10 V
=0
Electrical characteristics
Min.
Min
Typ.
TBD
TBD
TBD
Typ.
TBD
TBD
TBD
TBD
Max
Max.
1.3
19
76
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
5/10