STP8N65M5 STMicroelectronics, STP8N65M5 Datasheet - Page 3
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STP8N65M5
Manufacturer Part Number
STP8N65M5
Description
MOSFET N-CH 650V 7A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP8N65M5.pdf
(20 pages)
Specifications of STP8N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 100V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 Formed Leads
Transistor Polarity
N Channel
Continuous Drain Current Id
7A
Drain Source Voltage Vds
710V
On Resistance Rds(on)
0.56ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Power
RoHS Compliant
Configuration
Single
Resistance Drain-source Rds (on)
0.56 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
7 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10885-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STD/F/I/P/U8N65M5
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I
Table 3.
1. When mounted on 1 inch² FR-4 board, 2oz Cu.
R
Symbol
Symbol
R
dv/dt
R
I
thj-pcb
DM
P
V
thj-case
thj-amb
V
E
T
I
SD
I
I
TOT
AR
T
T
ISO
GS
AS
stg
D
D
l
j
(2)
(3)
(1)
≤ 7A, di/dt ≤ 400 A/µs, V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Max current during repetitive or single pulse
avalanche (pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance
junction-case max
Thermal resistance
junction-ambient max
Thermal resistance
junction-pcb max
Maximum lead
temperature for soldering
purpose
Absolute maximum ratings
Thermal data
Parameter
C
j
= 25°C, I
= 25 °C)
Parameter
D
Peak
C
Doc ID 16531 Rev 2
= I
= 25 °C
< V
AR
, V
DPAK IPAK TO-220 I²PAK D²PAK TO-220FP
(BR)DSS.
50
DD
C
C
= 25 °C
= 100 °C
= 50V)
JMAX
100
)
1.79
300
TO-220,
D²PAK
I²PAK
62.5
Value
4.4
28
70
7
-55 to 150
DPAK,
IPAK
Value
± 25
120
150
15
2
30
Electrical ratings
TO-220FP
4.4
28
2500
7
62.5
300
25
5
(1)
(1)
(1)
°C/W
°C/W
°C/W
Unit
Unit
V/ns
mJ
°C
°C
°C
W
V
A
A
A
A
V
3/20