FDS8449_F085 Fairchild Semiconductor, FDS8449_F085 Datasheet - Page 4

• Manufacturer Part Number: FDS8449_F085
• Description: MOSFET N-CH 40V 7.6A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8449_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 7.6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 20V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS8449_F085 Rev. A
Typical Characteristics
0.01
100
0.1
10
10
50
40
30
20
10
8
6
4
2
0
1
Figure 9. Maximum Safe Operating Area.
0
0.001
0.1
Figure 11. Single Pulse Maximum Peak
Figure 7. Gate Charge Characteristics.
0
R
SINGLE PULSE
R
DS(ON)
θ JA
V
T
I
D
GS
A
= 125
= 7.6 A
= 25
LIMIT
= 10V
0.01
o
o
C
C/W
-V
4
DS
, DRAIN-SOURCE VOLTAGE (V)
0.1
Q
1
g
, GATE CHARGE (nC)
Current.
t
1
DC
, TIME (sec)
10s
1
8
1s
V
100ms
DS
= 10V
10ms
10
10
1ms
20V
SINGLE PULSE
R
12
100 μ
θ JA
T
A
100
= 125°C/W
= 25°C
30V
1000
100
16
4
1000
100
800
600
400
200
Figure 12. Unclamped Inductive Switching
10
50
40
30
20
10
1
0
0
0.001
0.01
Figure 8. Capacitance Characteristics.
0
C
T
Figure 10. Single Pulse Maximum
rss
J
= 25
5
0.01
o
C
V
Power Dissipation.
10
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
t
AV
oss
0.1
0.1
Capability.
, TIME IN AVANCHE(ms)
15
t
1
, TIME (sec)
20
1
25
C
10
1
iss
SINGLE PULSE
30
R
θ JA
T
A
100
= 125°C/W
f = 1 MHz
V
= 25°C
www.fairchildsemi.com
GS
35
= 0 V
1000
10
40