FDMC7660 Fairchild Semiconductor, FDMC7660 Datasheet - Page 2
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FDMC7660
Manufacturer Part Number
FDMC7660
Description
MOSFET N-CH 30V 20A 8-PQFN
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMC7660.pdf
(7 pages)
Specifications of FDMC7660
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.2 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
4830pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
6-MLP, Power33
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC7660
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMC7660DC
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMC7660S
Manufacturer:
FAIRCHILD/ON
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDMC7660 Rev.C1
Notes:
1. R
2. Pulse Test: Pulse Width < 300
3. Starting T
4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
'BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
'V
d(on)
r
d(off)
f
rr
DS(on)
R
FS
GS(th)
SD
'T
'T
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
TJA
TJC
DSS
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25 °C, L = 1 mH, I
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
P
AS
s, Duty cycle < 2.0%.
= 20 A, V
TJA
Parameter
is determined by the user’s board design.
DD
a. 53°C/W when mounted on
= 27 V, V
a 1 in
2
T
pad of 2 oz copper
J
GS
= 25°C unless otherwise noted
= 10 V
V
V
V
V
V
f = 1MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DS
DD
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 20 A, di/dt = 100 A/Ps
= 250 PA, referenced to 25°C
= 250 PA, V
= 250 PA, referenced to 25°C
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 15 V, V
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
= 20 A
= 1.9 A
D
= 20 A
GS
GEN
GS
DS
= 250 PA
GS
= 20 A,
= 20 A, T
= 20 A
= 18 A
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 :
V
I
D
DD
= 20 A
= 15 V,
J
(Note 2)
(Note 2)
= 125°C
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
Min
1.2
30
3630
1345
110
163
0.9
0.8
0.7
Typ
1.7
1.8
2.6
2.2
6.8
5.7
5.6
25
45
14
36
54
24
11
-6
14
4830
1790
Max
165
1.2
1.2
100
2.5
2.2
3.3
3.1
63
35
25
14
58
86
38
11
www.fairchildsemi.com
1
mV/°C
mV/°C
Units
m:
pF
pF
pF
nC
ns
PA
nA
nC
nC
nC
nC
:
ns
ns
ns
ns
V
S
V
V