FDMC7660 Fairchild Semiconductor, FDMC7660 Datasheet - Page 2

• Manufacturer Part Number: FDMC7660
• Description: MOSFET N-CH 30V 20A 8-PQFN
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7660

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 4830pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMC7660 Rev.C1
Notes:
1. R
2. Pulse Test: Pulse Width < 300
3. Starting T
4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
'BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
'V
d(on)
r
d(off)
f
rr
DS(on)
R
FS
GS(th)
SD
'T
'T
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
TJA
TJC
DSS
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25 °C, L = 1 mH, I
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
P
AS
s, Duty cycle < 2.0%.
= 20 A, V
TJA
Parameter
is determined by the user’s board design.
DD
a. 53°C/W when mounted on
= 27 V, V
a 1 in
2
T
pad of 2 oz copper
J
GS
= 25°C unless otherwise noted
= 10 V
V
V
V
V
V
f = 1MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DS
DD
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 20 A, di/dt = 100 A/Ps
= 250 PA, referenced to 25°C
= 250 PA, V
= 250 PA, referenced to 25°C
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 15 V, V
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
= 20 A
= 1.9 A
D
= 20 A
GS
GEN
GS
DS
= 250 PA
GS
= 20 A,
= 20 A, T
= 20 A
= 18 A
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 :
V
I
D
DD
= 20 A
= 15 V,
J
(Note 2)
(Note 2)
= 125°C
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
Min
1.2
30
3630
1345
110
163
0.9
0.8
0.7
Typ
1.7
1.8
2.6
2.2
6.8
5.7
5.6
25
45
14
36
54
24
11
-6
14
4830
1790
Max
165
1.2
1.2
100
2.5
2.2
3.3
3.1
63
35
25
14
58
86
38
11
www.fairchildsemi.com
1
mV/°C
mV/°C
Units
m:
pF
pF
pF
nC
ns
PA
nA
nC
nC
nC
nC
:
ns
ns
ns
ns
V
S
V
V