FDS4141_F085 Fairchild Semiconductor, FDS4141_F085 Datasheet

MOSFET P-CH 40V 10.8A 8-SOIC

FDS4141_F085

Manufacturer Part Number
FDS4141_F085
Description
MOSFET P-CH 40V 10.8A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS4141_F085

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
10.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
2005pF @ 20V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDS4141_F085 Rev. A
FDS4141_F085
P-Channel PowerTrench
-40V, -10.8A, 19.0mΩ
Features
Typ r
Typ r
Typ Q
High performance trench technology for extremely low
r
RoHS Compliant
Qualified to AEC Q101
DS(on)
DS(on)
DS(on)
SO-8
g(TOT)
= 10.5mΩ at V
= 14.8mΩ at V
= 35nC at V
D
Pin 1
D
D
GS
GS
GS
D
= -10V
= -4.5V, I
= -10V, I
S
D
D
S
= -10.5A
= -8.4A
®
S
MOSFET
G
1
Applications
Control switch in synchronous & non-synchronous buck
Load switch
Inverter
D
D
D
D
5
6
7
8
3
2
4
1
May 2009
www.fairchildsemi.com
G
S
S
S

Related parts for FDS4141_F085

FDS4141_F085 Summary of contents

Page 1

... I DS(on) GS Typ Q = 35nC -10V g(TOT) GS High performance trench technology for extremely low r DS(on) RoHS Compliant Qualified to AEC Q101 SO-8 Pin 1 ©2009 Fairchild Semiconductor Corporation FDS4141_F085 Rev. A ® MOSFET Applications Control switch in synchronous & non-synchronous buck = -10.5A D Load switch = -8.4A D Inverter ...

Page 2

... Gate Resistance g Q Total Gate Charge at -10V g(TOT) Q Total Gate Charge at -5V g(-5) Q Gate to Source Gate Charge gs Q Gate to Drain “Miller“ Charge gd FDS4141_F085 Rev 25°C unless otherwise noted A Parameter = 10V copper pad area Package Reel Size SO-8 13” 25°C unless otherwise noted ...

Page 3

... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDS4141_F085 Rev ...

Page 4

... Figure 3. 1000 TRANSCONDUCTANCE - V = 10V GS MAY LIMIT CURRENT IN THIS REGION 100 10 SINGLE PULSE C/W θ FDS4141_F085 Rev 100 125 150 Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION (s) Normalized Maximum Transient Thermal Impedance - RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 10V ...

Page 5

... Transfer Characteristics 50 PULSE DURATION = 10.5A D DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDS4141_F085 Rev 1ms 10 10ms 100ms 0.01 10 100 300 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching - Figure 8 ...

Page 6

... T , JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 4000 1000 f = 1MHz 100 0 DRAIN TO SOURCE VOLTAGE DS Figure 13. Capacitance vs Drain to Source Voltage FDS4141_F085 Rev µ 250 1.05 1.00 0.95 0.90 -80 75 100 125 150 ( ) o C Figure 12. Normalized Drain to Source ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDS4141_F085 Rev. A F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...

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