FDD13AN06A0_F085 Fairchild Semiconductor, FDD13AN06A0_F085 Datasheet
FDD13AN06A0_F085
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FDD13AN06A0_F085 Summary of contents
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... Primary Switch for 12V and 24V systems DRAIN (FLANGE 25°C unless otherwise noted C Parameter 10V 10V C/W) θ copper pad area certification. September 2010 Ratings Units 60 V ± 9.9 A Figure 115 -55 to 175 C o 1.3 C/W o 100 C C/W FDD13AN06A0_F085 Rev. A ...
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... 50A, dI /dt = 100A/μ Tape Width Quantity 16mm 2500 units Min Typ Max 150 250 C ±100 - - 0.0115 0.0135 - 0.022 0.034 - 0.026 0.030 - 1350 - - 260 - - 2.6 3.4 = 30V DD = 50A - 8 1.0mA - 5 6 130 - 1. 1 FDD13AN06A0_F085 Rev. A Units V μ Ω ...
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... RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK θJC θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD13AN06A0_F085 Rev. A 175 ...
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... If R ≠ (L/R)ln[(I *R)/(1.3*RATED DSS o STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability 20V = 10V PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 0.5 1.0 1 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDD13AN06A0_F085 Rev +1] DD 100 = 6V 2.0 =50A 200 ...
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... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS Figure 14. Gate Charge Waveforms for Constant = 250μA - 120 160 JUNCTION TEMPERATURE ( 30V WAVEFORMS IN DESCENDING ORDER 50A 25A GATE CHARGE (nC) g Gate Current FDD13AN06A0_F085 Rev. A 200 25 ...
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... Figure 19. Switching Time Test Circuit ©2010 Fairchild Semiconductor Corporation DUT 0.01Ω Figure 16. Unclamped Energy Waveforms gs2 DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD13AN06A0_F085 Rev 10V 90% ...
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... C/W) θJA is never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ.2 θ 33.32+ 154/(1.73+Area) EQ.3 θJA 0 (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD13AN06A0_F085 Rev. A ...
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... Fairchild Semiconductor Corporation DPLCAP RSLC2 RDRAIN 6 ESG 8 EVTHRES + LGATE EVTEMP 8 RGATE + MSTRO RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 DBREAK ESLC DBODY EBREAK MWEAK MMED LSOURCE SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDD13AN06A0_F085 Rev ...
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... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD13AN06A0_F085 Rev. A DRAIN 2 SOURCE 3 ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDD13AN06A0_F085 Rev. A ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower¥ F-PFS¥ Auto-SPM¥ FRFET Build it Now¥ Global Power Resource CorePLUS¥ ...