FDS2672_F085 Fairchild Semiconductor, FDS2672_F085 Datasheet - Page 3

• Manufacturer Part Number: FDS2672_F085
• Description: MOSFET N-CH 200V 3.9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of FDS2672_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 2535pF @ 100V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDS2672_F085 Rev. A
Typical Characteristics
Figure 3.
50
40
30
20
10
2.8
2.2
1.6
1.0
0.4
30
25
20
15
10
0
5
0
Figure 1. On Region Characteristics
-50
0
2
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
I
Normalized On Resistance vs Junction
D
GS
V
= 3.9A
-25
DD
= 10V
V
V
T
= 10V
GS
DS
J
, JUNCTION TEMPERATURE
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
1
3
0
Temperature
V
25
GS
T
µ
= 6V
J
µ
s
= 150
s
2
50
4
o
C
V
T
GS
75
J
= 25°C unless otherwise noted
= 10V
T
J
100
3
5
= - 55
(
V
o
V
GS
C
T
GS
J
)
o
= 4.5V
125
= 25
C
= 5V
o
C
150
4
6
3
Figure 2. Normalized
Figure 4.
1E-3
0.01
Figure 6.
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
180
160
140
120
100
10
80
60
40
1
0.0
3.0
0
V
5
SD
Voltage vs Source Current
V
Current and Gate Voltage
V
GS
0.2
On-Resistance vs Gate to Source
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
GS
V
T
10
GS
= 0V
J
4.5
, GATE TO SOURCE VOLTAGE (V)
= 150
= 4.5V
I
I
D
D
15
, DRAIN CURRENT(A)
= 3.9A
o
0.4
C
Voltage
T
T
J
20
J
= 25
On-Resistance vs Drain
= 150
6.0
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
o
0.6
GS
25
C
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
o
C
= 5V
30
7.5
T
0.8
J
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35
= -55
V
T
GS
J
o
V
40
= 6V
= 25
C
GS
1.0
9.0
µ
= 10V
o
s
C
45
µ
s
1.2
50
10