FDMS7650 Fairchild Semiconductor, FDMS7650 Datasheet - Page 2

• Manufacturer Part Number: FDMS7650
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS7650

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 990 mOhm @ 36A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 209nC @ 10V
• Input Capacitance (ciss) @ Vds: 14965pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 mOhms
• Forward Transconductance Gfs (max / Min): 267 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 104 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMS7650 Rev.E
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting T
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
∆T
∆T
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
J
= 25 °C, L = 1 mH, I
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
= 33 A, V
Parameter
DD
= 27 V, V
a. 50 °C/W when mounted on a
1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
2
J
pad of 2 oz copper.
GS
= 25 °C unless otherwise noted
= 10 V.
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DS
DD
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 36 A, di/dt = 100 A/µs
= 250 µA, referenced to 25 °C
= 250 µA, V
= 250 µA, referenced to 25 °C
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 15 V, V
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
= 2.1 A
= 36 A
D
= 36 A
GS
GEN
GS
DS
= 250 µA
GS
= 36 A,
= 36 A
= 36 A, T
= 32 A
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 36 A
J
= 15 V,
= 125 °C
(Note 2)
(Note 2)
θJC
b. 125 °C/W when mounted on a
is guaranteed by design while R
minimum pad of 2 oz copper.
Min
30
1
11250
3050
149
240
267
1.4
0.7
0.8
Typ
1.9
0.8
1.1
1.1
28
24
83
21
63
34
13
56
69
-6
15
14965
4055
0.99
1.55
Max
360
133
209
1.2
1.3
100
1.7
45
38
34
88
97
90
θCA
3
3
www.fairchildsemi.com
1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
µA
nA
Ω
V
S
V
V