FQB25N33TM_F085 Fairchild Semiconductor, FQB25N33TM_F085 Datasheet - Page 2

• Manufacturer Part Number: FQB25N33TM_F085
• Description: MOSFET N-CH 330V 25A D2PAK
• Manufacturer: Fairchild Semiconductor

Specifications of FQB25N33TM_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 330V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 15V
• Input Capacitance (ciss) @ Vds: 2010pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQB25N33TM_F085 Rev. A
Notes:
1: Repetitive Rating : Pluse width Limited by maximum junction temperature
2: L = 1.79mH, I
3: I
4: Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5: Essentially independent of operating temperature
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics and Maximum Ratings
Package Marking and Ordering Information
Symbol
B
∆B
I
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
I
I
V
t
Q
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
Device Marking
FS
VDSS
GS(th)
SD
∆T
DS(
iss
oss
rss
g(TOT)
gs
gd
rr
SD
VDSS/
J
≤ 25A, di/dt ≤ 200A/µs, V
on)
FQB25N33
Gate Threshold Voltage
Drain to Source On Resistance
Forward Transonductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient I
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Forward
AS
= 25A, V
DD
= 50V, R
DD
FQB25N33TM_F085
Parameter
≤ BV
G
DSS
= 25Ω, Starting T
Device
, Starting T
T
J
C
= 25
= 25°C unless otherwise noted
J
= 25
o
C
o
C
Package
D2-PAK
V
V
V
V
V
dI
I
V
V
V
V
V
f = 1.0MHz
V
R
V
V
D
D
DS
GS
DS
GS
GS
DS
DS
GS
GS
DS
DD
GS
DS
GS
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
2
= V
= 50V, I
= 330V,V
= 264V,T
= 10V, I
= 297V, I
= 0, I
= 0, I
= 30V, V
= -30V, V
= 25V, V
= 165V, I
= 15V,
= 25Ω
Test Conditions
GS
S
S
, I
= 25A
= 25A,
D
D
D
DS
GS
Reel Size
GS
D
D
GS
C
DS
= 12.5A, (Note 4)
= 250µA
= 12.5A,
= 25A,
=125°C
= 25A
= 0V
= 0V,
330mm
= 0V
= 0V
= 0V
(Note 4, 5)
(Note 4, 5)
(Note 4)
o
C
Tape Width
Min
330
3.0
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24mm
1510
11.2
Typ Max Units
0.34
100
0.18
290
275
3.6
40
20
90
70
58
21
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1
www.fairchildsemi.com
2010
-100
100
0.23
160
145
110
100
385
1.5
Quantity
10
5.0
35
75
60
25
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1
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800
V/
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
V
Ω
A
A
V
V
S
o
C